镓离子掺杂量对ZnO压敏电阻性能的影响  

Effect of Ga^(3+) Doping Content on the Properties of ZnO-Based Varistors

作　　者：江海波 任鑫 劳学斌 钟美莲 孔安廷 姚政 施利毅[1] JIANG Haibo;REN Xin;LAO Xuebin;ZHONG Meilian;KONG Anting;YAO Zheng;SHI Liyi(College of Sciences,Shanghai University,Shanghai 200444,China)

机构地区：[1]上海大学理学院,上海200444

出　　处：《电瓷避雷器》2023年第4期46-50,共5页Insulators and Surge Arresters

基　　金：上海市自然科学基金(编号:17ZR1410300)。

摘　　要：研究了不同含量Ga^(3+)掺杂对ZnO基压敏电阻微观结构,电学性能的影响。微观结构上,掺杂Ga^(3+)没有对压敏电阻的相组成产生改变但抑制了氧化锌晶粒的生长,并使得尖晶石数量增多,尺寸减小;电学性能上,因为势垒下降和晶界电导率提高少量增加的Ga^(3+)掺杂就显著增大了漏电流,降低了非线性,提高了压敏电阻的梯度。当Ga^(3+)掺杂量增加到0.014 mol%时,压敏电阻在5 kA冲击下达到了最小残压比为1.72,此时电位梯度309.05 V/mm,非线性系数为18.0,漏电流为20μA。The effect of different Ga^(3+)doping content on the microstructure and electrical properties of ZnO based varistors were studied.In terms of microstructure,Ga^(3+)doping did not change the phase composition of the varistor,but inhibited the growth of ZnO grains,increased the quantity and reduced the size of spinel.In terms of electrical properties,due to the decrease of potential barrier and the increase of grain boundary conductivity,small increase in Ga^(3+)doping amount significantly increased the leakage current,reduced the nonlinearity,and increased breakdown voltage gradient of the varistor.When Ga^(3+)doping was increased to 0.014 mol%,the minimum clamping voltage ratio is 1.72 under 5 kA surge,the breakdown voltage gradient is 309.05 V/mm,the nonlinear coefficient is 18.0 and leakage current is 20μA.

关 键 词：ZNO压敏电阻 镓离子 电性能 

分 类 号：TM54[电气工程—电器]