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作 者:Zhengxu Cai Zitong Liu Hewei Luo Penglin Qi Guanxin Zhang Deqing Zhang
机构地区:[1]不详 [2]Beijing National Laboratory for Molecular Sciences,CAS Key Laboratory of Organic Solids,Institute of Chemistry,Chinese Academy of Sciences,Beijing 100190,China
出 处:《Chinese Journal of Chemistry》2014年第8期788-796,共9页中国化学(英文版)
基 金:The present research was financially supported by Chinese Academy of Sciences,NSFC(No.21372226)and State Key Basic Research Program.
摘 要:In this paper,we report the design,synthesis and semiconducting behavior of two conjugated D-A polymers BPDDTE and BPDBDTE which entail BPD,a Pechmann dye framework,as electron accepting moieties and(E)-1,2-di(thiophen-2-yl)ethane with and without alkyl chains as electron donating moieties.They both show very narrow bandgaps below 1.3 eV.Based on the characterization of the field-effect transistors,thin film of BPDDT exhibits ambipolar semiconducting properties with hole and electron mobilities reaching 0.245 and 0.095 cm^(2)•V^(−1)•s^(−1),respectively,after thermal annealing.Similarly,BPDBDTE with more alkylchains shows ambipolar semiconducting behavior with hole mobility and electron mobilities reaching 0.109 and 0.081 cm^(2)•V^(−1)•s^(−1).Furthermore,BPDBDTE shows good solubilities in several common organic solvents and thus is easily solution-processible.Thus,BPDBDTE is potentially processible with inkjet printing and roll-to-roll printing techniques.
关 键 词:Pechmann dye conjugated polymer field-effect transistor ambipolar behavior
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