不同禁带宽度催化剂协同低温等离子体氧化NO_(x)  

Oxidation of NO_(x) by low⁃temperature plasma using catalysts with different band gaps

作　　者：郭子妮 屈吉艳 罗建洪[1] GUO Zini;QU Jiyan;LUO Jianhong(School of Chemical Engineering,Sichuan University,Chengdu 610065,China)

机构地区：[1]四川大学化学工程学院,四川成都610065

出　　处：《无机盐工业》2023年第9期126-133,共8页Inorganic Chemicals Industry

基　　金：国家重点研发计划项目(2018YFC1900203-03);四川省科技计划项目(2021YF0285)。

摘　　要：由于催化剂协同低温等离子体法脱除氮氧化物效果显著,通过研究制备了WO_(3)、ZnO、NiO、CdS和Cu_(2)O共5种禁带宽度不同的催化剂,通过SEM、XRD、Raman等表征方式,对比了与低温等离子体联合催化氧化NO与NO_(x)的性能。实验得出:P型半导体对NO_(x)去除效果较差,N型半导体对NO_(x)的去除具有明显效果;氧化效率由大到小依次为CdS、WO_(3)、ZnO,这与其禁带宽度值正好相反;CdS对NO、NO_(x)的氧化效率分别为98.4%、84.4%,并且CdS循环再利用的催化性能效果依旧。阐明了等离子体和催化剂对反应过程的具体影响和二者之间的耦合作用。经过放电催化后的样品,借助离子色谱测定其表面的NO_(3)^(-)与NO_(2)^(-),有利于深入了解此类协同机制。The removal of nitrogen oxides by catalyst and low-temperature plasma is remarkable.Five catalysts with different band gaps,such as WO_(3),ZnO,NiO,CdS and Cu_(2)O,were prepared.By means of SEM,XRD and Raman characterization,the catalytic oxidation performance of NO and NO_(x) combined with low temperature plasma was compared.P-type semiconduc-tors had no effect on NO_(x) removal,while N-type semiconductors had obvious effect on NO_(x) removal.The order of oxidation efficiency from big to small was CdS,WO_(3),ZnO,which was exactly opposite to their band gap values.The degradation effi-ciency of NO and NO_(x) by CdS was 98.4%and 84.4%respectively,and the catalytic performance of CdS recycling was still good.The specific effects of plasma and catalyst on the reaction process and the coupling between them were described.The determination of NO_(3)^(-)and NO_(2)^(-)on the surface of samples catalyzed by discharge by ion chromatography was conducive to further understanding of such synergistic mechanism.

关 键 词：等离子体 催化剂 NO_(x) 禁带宽度 

分 类 号：TQ126.23[化学工程—无机化工]