异常环境因素对热释光剂量计的影响  

Effects of abnormal environmental factors on thermoluminescence dosimeter

作　　者：黄铭 张辉[2,3] 康宁[1,2] 胡玉新[1] 侯利娜 王兵[1] 朱国平 邓艳丽 HUANG Ming;ZHANG Hui;KANG Ning;HU Yuxin;HOU Lina;WANG Bing;ZHU Guoping;DENG Yanli(Nuctech Company Limited,Beijing 100084;Center for Building Environment Test,Tsinghua University,Beijing 100084;Department of Engineering Physics,Tsinghua University,Beijing 100084)

机构地区：[1]同方威视技术股份有限公司,北京100084 [2]清华大学建筑环境检测中心,北京100084 [3]清华大学工程物理系,北京100084

出　　处：《辐射防护》2023年第S01期33-38,共6页Radiation Protection

摘　　要：研究TLD2000C型LiF(Mg,Cu,P)热释光剂量计(TLD)在受到异常环境因素影响时的相对响应变化规律,确保热释光剂量测读准确性。通过热释光剂量计受高温高湿、浸水、强电磁辐射等异常环境因素影响后的响应与常规环境条件下的响应对比实验,分析TLD受到异常环境因素影响时的相对响应变化规律。高温高湿条件下,TLD的相对响应变化约为-7%,短时间浸水和强电磁辐射环境对TLD的相对响应变化影响较小。高温高湿环境会使TLD的相对响应产生较小的负变化,在使用、存储、运输TLD的过程中应加以注意;短时间浸水或雨淋对TLD相对响应变化影响较小,测读结果具有参考价值;置于强电磁辐射环境下的TLD可正常测读与使用。In order to ensure the accuracy of personal dose measurement,study on the change of relative response of TLD2000C LiF(Mg,Cu,P)thermoluminescence dosimeter(TLD)under the influence of abnormal environmental factors was conducted.Performance experiment in the conditions of normal and abnormal environmental factors,such as high temperature and high humidity,water immersion and high electromagnetic radiation,and the difference of relative responses of TLD between different environmental factors were analyzed.The change of relative response of TLD is about-7%under high temperature and high humidity conditions,and The effect of short time immersion and high electromagnetic radiation environment on the relative response of TLD is very little.High temperature and high humidity environment will produce minus change to the relative response of TLD,therefore attention should be paid in the process of use,storage and transportation.Short time immersion or rain fall has little effect on the relative response of TLD.The experimental results have good reference value.TLD can be read and used normally when placed in high electromagnetic radiation environment.

关 键 词：热释光剂量计 TLD 异常环境因素 相对响应变化 

分 类 号：TL816.7[核科学技术—核技术及应用]