拓扑绝缘体中量子霍尔效应的研究进展  

Research progress of quantum Hall effect in topological insulator

作　　者：张帅[1] 宋凤麒[1] Zhang Shuai;Song Feng-Qi(Collaborative Innovation Center of Advanced Microstructures,National Laboratory of Solid State Microstructures,School of Physics,Nanjing University,Nanjing 210093,China)

机构地区：[1]南京大学物理学院,固体微结构物理国家重点实验室,人工微结构科学与技术协同创新中心,南京210093

出　　处：《物理学报》2023年第17期41-51,共11页Acta Physica Sinica

基　　金：国家重点基础研究发展计划(批准号:2022YFA1402404);国家自然科学基金(批准号:92161201,T2221003,12025404,11904166)资助的课题.

摘　　要：三维拓扑绝缘体因其独特的物性备受研究人员关注,而拓扑表面态的输运是探索其新奇物性的重要手段.其中,拓扑表面态的量子霍尔效应则是拓扑绝缘体输运研究的一个重要内容.本文简要回顾了拓扑绝缘体中量子霍尔效应的实现与发展.比较了拓扑表面态量子霍尔效应与其他体系的差别,讨论了其材料体系的发展,并介绍了其中的标度律行为.之后详细回顾了实验上对拓扑表面态量子霍尔效应磁性近邻与栅压调控等方面的研究.最后,展望了拓扑绝缘体中量子霍尔态的研究前景,希望能促进拓扑绝缘体的应用.Three-dimensional topological insulators(TIs)with gapless topological surface states(TSSs)have attracted considerable attention because of their unique properties.The transport of TSS is an essential means to explore the novel properties.The quantum Hall effect(QHE)of TSS is an important content in the study of topological insulator,for it is an important characteristic of the pure TSS transport.This paper briefly reviews the recent research progress of QHE in TIs.Firstly,we introduce the fundamental concepts of the QHE in TIs.In a threedimensional TI,each TSS contributes to a half-integer QHE.An integer QHE should be observed due to the existence of top and bottom surface in TI.Then,we review the realization and development of QHE.With the optimization of TI materials,the QHE of TSS is observed in bulk-insulating TIs.Next,the phase transition and scaling law behavior of QHE in TIs are discussed.The dominance of electron-electron interaction of the TSS is revealed by the anomalous critical exponent.Also,the experimental studies of the magnetic proximity and gate voltage modulation of the QHE are reviewed in detail.Finally,the perspectives of QHE in TIs are discussed.

关 键 词：量子霍尔效应 拓扑绝缘体 狄拉克费米子 

分 类 号：O413[理学—理论物理]