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作 者:刘明珠 樊娆 张萧宇 马泽元 梁城洋 曹颖 耿仕通 李玲[1] LIU Mingzhu;FAN Rao;ZHANG Xiaoyu;MA Zeyuan;LIANG Chengyang;CAO Ying;GENG Shitong;LI Ling(School of Physical Sciences and Technology,Hebei University,Baoding 071002,China)
机构地区:[1]河北大学物理科学与技术学院,保定071002
出 处:《材料研究学报》2023年第7期554-560,共7页Chinese Journal of Materials Research
基 金:国家自然科学基金(51772073);河北省自然科学基金(E2020201030);京津冀协同创新共同体建设专项(21344301D);河北大学2022年大学生创新创业计划训练(2022169,2022165,2022170)。
摘 要:先用一步水热法合成空心纳米球,再将其作为量子点敏化太阳能电池(QDSSCs)光阳极的散射层材料用丝网印刷技术刮涂在TiO_(2)基底上。组装成的QDSSCs电池具有优异的电化学性能,表明SnO_(2)的空心球结构有利于电解质的存储,在保证电子高效传输速率的同时提高其化学稳定性,使循环反应更加有效。在QDSSCs的制备过程中,以ZnCuInSe量子点为敏化剂,进一步研究了吸附量子点后不同膜厚的光阳极对太阳能电池光电性能的影响。膜厚为9μm的SnO_(2)散射层其最高光电转换效率值7.31%,可应用在QDSSCs中。To search superior photoanode materials for further enhancing the cell performance of quantum dot-sensitized solar cells(QDSSCs),the zero-dimensional SnO_(2)may be a good option for its excellent cycling stability,high mobility and bandgap tunability.For this purpose,hollow nanospheres of SnO_(2),as the candidate material for scattering layer of the photoanode were synthesized by a simple one-step hydrothermal method,and then screen-printed on the TiO_(2)substrate to produce a photoanode for quantum dot sensitized solar cells(QDSSCs),which showed excellent electrochemical performance.It is demonstrated that the hollow sphere structure of SnO_(2)facilitates the storage of electrolytes and improves its chemical stability while ensuring an efficient electron transfer rate,allowing the cyclic reaction to proceed more efficiently.ZnCuInSe quantum dots were used as sensitizers for the preparation of QDSSCs.Thus it is meaningfull to investigate the effect of photoanodes with different thickness of TiO_(2)films printed with quantum dots on the photovoltaic performance of solar cells.Several sets of test results show that when the thickness of the SnO_(2)scattering layer is 9μm,the photoelectric conversion efficiency reaches a maximum value of 7.31%.This opens up the possibility of using SnO_(2)in QDSSCs.
关 键 词:无机非金属材料 量子点敏化太阳能电池 丝网印刷技术 SnO_(2)散射层 光阳极膜厚 电化学特性
分 类 号:TQ152[化学工程—电化学工业]
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