基于薄膜电阻加载的宽带电场探头工艺的实现  

Process Realization Method of Wideband Electric Field Probe with Tapered Resistive Dipoles of Thin films

作　　者：曹乾涛 孙佳文 贾定宏 CAO Qiantao;SUN Jiawen;JIA Dinghong(Ceyear Technologies Co.,Ltd.,Qingdao 266555,China)

机构地区：[1]中电科思仪科技股份有限公司,山东青岛266555

出　　处：《电子工艺技术》2023年第5期12-14,24,共4页Electronics Process Technology

基　　金：国家自然科学基金项目(62027806)。

摘　　要：基于分布式薄膜电阻加载的电场探头,可实现电场辐射的高灵敏度低失真宽带电场辐射检测。基于薄膜混合集成电路工艺,在Al_(2)O_(3)陶瓷上使用8~12Ω/TaN薄膜用来制作电场探头天线,使用200~300Ω/TaN薄膜用来制作分布式低通滤波器及高阻传输线。通过沉积TiW/Au薄膜作为光刻蚀硬掩膜,经过多次套刻对准,将两种方阻TaN材料薄膜电阻分别进行保护或隔离,有效实现了TaN材料两种方阻电阻薄膜互连,最终将制作的陶瓷薄膜电路与检波二极管微组装成3 MHz~18 GHz及100 MHz~60 GHz电场探头,动态范围为0.5~650 V/m,实现了电场辐射超宽带高灵敏度感知。Wideband electric field probe with tapered resistive dipoles of thin films,can realize high sensitivity and low distortion wideband detection of electric field radiation.TaN thin film of 8~12 Ω/□TaN is prepared to make small electric dipole antennas,and TaN thin film of 200~300 Ω/□TaN is prepared to make distributed low-pass filters and high impedance transmission lines on a Al_(2)O_(3) substrate,based on thin film hybrid integrated circuit technology.As the two sheet resistances of TaN thin film resistors are protected or isolated respectively through lithography and etching using TiW/Au thin films as the hard mask,effective interconnection of thin film is gained after many sets of overlay alignment.A 3 MHz~18 GHz electric field probe and a 100 MHz~60 GHz electric field probe are integrated finally by micro-assembly technology,using the thin film circuits of ceramic and detection diodes.The dynamic range of these two wideband electric field probes is 0.5~650 V/m,and the wideband high sensitivity sensing of electric field radiation is realized.

关 键 词：电场探头 薄膜混合电路集成工艺 TaN薄膜 电阻薄膜互连 

分 类 号：TN405[电子电信—微电子学与固体电子学]