直拉重掺硼硅单晶特殊原生位错的分析改进  

Investigation and Improvement on Special Native Dislocations in Heavily Boron-doped Czochralski Silicon

作　　者：莫宇[1] 韩焕鹏[1] 赵堃 MO Yu;HAN Huanpeng;ZHAO Kun(The 46th Research Institute of CETC,Tianjin 300220,China)

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《电子工艺技术》2023年第5期55-57,共3页Electronics Process Technology

摘　　要：研究了<100>重掺硼硅单晶中出现的一种特殊原生位错,分析了腐蚀坑的形态以及腐蚀坑的排列规律,认为单晶生长过程中固液界面局部区域发生严重组分过冷导致了位错产生。设计了采用不同晶体生长速度的重掺硼单晶生长的试验,得到了无特殊原生位错的重掺硼单晶,同时还发现组分过冷不仅出现在晶体等径阶段,在放肩和收肩阶段同样可能发生。Special native dislocations in(100)-oriented heavily boron-doped silicon single crystal is invested.By studying and analyzing the morphology of etch pits and the arrangement of etch pits,it is considered that constitutional supercooling in the local area of the solid-liquid interface during the single crystal growth process lead to the generation of dislocations.Some growth experiments of heavy borondoped single crystals with different crystal growth rates are designed,and the heavy boron-doped single crystals without special native dislocations are obtained.At the same time,it is found that constitutional supercooling occurs not only in the body growth,but also in the crown growth and the shoulder growth.

关 键 词：重掺硼 组分过冷 生长速度 

分 类 号：TN404[电子电信—微电子学与固体电子学]