硼掺杂SiO_(2)纳米颗粒的制备及其红外辐射性能  

Preparation and infrared radiation properties of boron-doped SiO_(2)nanoparticles

作　　者：张星星 高相东 董余兵[1] 段灯 ZHANG Xingring;GAO Xiangdong;DONG Yubing;DUAN Deng(School of Materials Science&Engineering,Zhejiang Sci-Tech University,Hangzhou 310018,China;Suzhou Research Center,Shanghai Institute of Ceramics,Chinese Academy of Sciences,Shanghai 200050,China)

机构地区：[1]浙江理工大学材料科学与工程学院,杭州310018 [2]中国科学院上海硅酸盐研究所苏州研究院,上海200050

出　　处：《浙江理工大学学报（自然科学版）》2023年第5期541-549,共9页Journal of Zhejiang Sci-Tech University(Natural Sciences)

基　　金：科技部重点研发计划(2016YFA0201103);山东泰山产业领军人才资助项目(2019TSCYCX-32)。

摘　　要：为提高二氧化硅(SiO_(2))纳米颗粒在大气窗口波段的红外辐射性能,以正硅酸乙酯为硅源、硼酸为掺杂源,采用改进St9ber法制备了硼掺杂SiO_(2)纳米颗粒,并分析硅源加入方式、硼摩尔掺量、烧结温度等对SiO_(2)纳米颗粒的结晶性能、化学成分、微观结构和红外发射率的影响。结果表明:硅源加入方式显著影响纳米颗粒的尺寸和形貌,连续滴加法制备的纯SiO_(2)和硼掺杂SiO_(2)纳米颗粒粒径更大且形状更规则;硼掺杂可诱发SiO_(2)在高温下生成石英晶体相,形成B—O-Si键,并导致SiO_(2)纳米颗粒的尺寸、平均孔径、比表面积增大;硼掺杂可显著提高SiO_(2)纳米颗粒的红外辐射性能,硼摩尔掺量为0.40且经过550℃烧结的样品在8~13μm波段的平均发射率高达0.982。硼掺杂SiO_(2)纳米颗粒具有耐高温和高红外辐射特性,在耐高温节能涂层、辐射制冷等领域具有广阔应用前景。Boron-doped SiO_(2)nanoparticles were prepared by a modified St9ber method using ethyl orthosilicate as the silicon source and boric acid as the dopant source,with an aim to improve the infrared radiation performance of silicon dioxide(SiO_2)nanoparticles in the atmospheric window band.Effects of the silicon source addition methods,the boron molar doping,and the sintering temperature on the crystallinity,chemical composition,microstructure,and infrared emissivity of SiO_(2)nanoparticles were investigated.Results show that the incorporation of silicon source affects the size and morphology of nanoparticles significantly,and the particle size of pure SiO_(2)and boron-doped SiO_(2)nanoparticles prepared by the continuous drop addition method is larger and more regular.The boron doping can induce the formation of cristobalite crystalline phase of SiO_(2)at high temperature and form B—O—Si bonds,and lead to the increase of the particle size,the average pore size and the specific surface area of SiO_(2)nanoparticles.The boron doping can obviously improve the infrared radiation properties of SiO_(2)nanoparticles.The average emissivity of the samples sintered at 550℃with a boron molar doping of 0.40 in the band range of 8 and 13μm can reach 0.982.The boron-doped SiO_(2)nanoparticles with high temperature resistance and high infrared emissivity have promising applications in the fields of high-temperature resistant energy-saving coatings and radiation cooling.

关 键 词：SiO_(2)纳米颗粒 硼掺杂 St9ber法 大气窗口 红外辐射 

分 类 号：TQ115[化学工程—无机化工]