B位Mn/W共掺杂对Bi_(4)Ti_(3)O_(12)铋层状压电陶瓷的电学性能影响  

Effect of B-site Mn/W Co-doping on Electrical Properties of Bi_(4)Ti_(3)O_(12)Bismuth Layered Piezoelectric Ceramics

作　　者：梁志豪 黄荣厦[1] 张艺 LIANG Zhihao;HUANG Rongxia;ZHANG Yi(School of Electromechanical Engineering,Guangdong University of Technology,Guangzhou 510006,Guangdong,China)

机构地区：[1]广东工业大学机电工程学院,广东广州510006

出　　处：《陶瓷学报》2023年第4期719-726,共8页Journal of Ceramics

基　　金：国家自然科学基金(51772204);广东高技术陶瓷创新团队项目(2013G061);中央高校基本科研业务费专项资金(19lgzd04)。

摘　　要：采用直接反应烧结法制备Mn/W共掺杂的Bi_(4)Ti_(3-x)(Mn_(1/3)W_(2/3))_(x)O_(12)(BITMW-100x,0.01<x<0.07)铋层状高温压电陶瓷,研究Mn/W掺杂含量对BITMW-100x陶瓷的结构和电学性能的影响。XRD图谱结果显示,所有样品均表现出单一相。随着Mn/W掺杂含量的增加,SEM图谱中观察到陶瓷晶粒的尺寸呈现先变大后变小的趋势。介温图谱中发现Mn/W的掺杂能有效抑制Bi_(4)Ti_(3)O_(12)陶瓷样品的介电损耗,同时居里温度也呈现小幅度下降。Mn/W在取代Ti离子后能减少Bi_(4)Ti_(3)O_(12)陶瓷的氧空位缺陷浓度,减少氧空位对电畴的钉扎效应,提升压电系数。当Mn/W掺杂含量x=0.05时,陶瓷样品具有最佳的综合性能:介电损耗(tanδ)为0.7%,居里温度为674℃,压电常数(d_(33))为18.1pC·N^(-1),同时压电常数具有良好的热稳定性。Mn/W co-doped Bi_(4)Ti_(3-x)(Mn_(1/3)W_(2/3))_(X)O_(12)(BITMW-100x,0.01≤x≤0.07)bismuth layered high temperature piezoelectric ceramics were prepared by using direct reaction sintering method.The effects of Mn/W content on structural and electrical properties of the BITMW-100x ceramics were studied.XRD results indicated that all samples exhibited typical bismuth layered structure.With increasing content of Mn/W,grain size of the ceramic grains increased first and then decreased.Dielectric loss of the BisTigOi2 ceramic samples is effectively suppressed after the doping with Mn/W,while the Curie temperature shows a slight reduction.Owing to the decrease in the concentration of oxygen vacancy in the BigTigO12 ceramics after replacing Ti,the pinning effect of oxygen vacancies on electric domains is weakened,so that the piezoelectric coefficient is increased.When the Mn/W doping content is x=0.05,the ceramic samples have the optimal overall performance,with dielectric loss(tano)of 0.7%,Curie temperature of 674 C and piezoelectric constant(d33)of 18.1 pC·N^(-1).Meanwhile,the piezoelectric constant has promising thermal stability.

关 键 词：压电陶瓷 Bi_(4)Ti_(3)O_(12) B位掺杂 铁电 铋层状结构 

分 类 号：TQ174.75[化学工程—陶瓷工业]