镍掺杂对FTO薄膜光电性能的影响及机理分析  

Effect of Ni-Doping on Optical and Electrical Properties of FTO Thin Film and Its Mechanism Analysis

作　　者：吴宝棋 张琴 刘起英 史国华 赵洪力[1] WU Baoqi;ZHANG Qin;LIU Qiying;SHI Guohua;ZHAO Hongli(State Key Laboratory of Metastable Materials Preparation Technology and Science,College of Materials Science and Engineering,Yanshan University,Qinhuangdao 066004,China;Weihai CNG New Material Technology R&D Co.,Ltd.,Weihai 264200,China)

机构地区：[1]燕山大学材料科学与工程学院亚稳材料制备技术与科学国家重点实验室,秦皇岛066004 [2]威海中玻新材料技术研发有限公司,威海264200

出　　处：《硅酸盐通报》2023年第9期3379-3386,共8页Bulletin of the Chinese Ceramic Society

基　　金：国家自然科学基金(52172105);泰山产业领军人才工程。

摘　　要：本文以单丁基三氯化锡(MBTC)为锡源,氟化铵(NH_(4)F)为氟源,甲醇为溶剂,六水合氯化镍(NiCl_(2)·6H_(2)O)为镍源,采用气溶胶辅助化学气相沉积(AACVD)制备了镍掺杂FTO薄膜。利用分光光度计、四探针电阻仪及霍尔效应测试仪对镍掺杂FTO薄膜的光学性能、电学性能进行表征和分析,并基于第一性原理对掺杂体系的电子结构进行了计算。结果表明,Ni掺杂的FTO薄膜为四方金红石结构,导电性能有所提高。当Ni/Sn为2%(原子数分数)时,品质因数Φ_(TC)达到3×10^(-2)Ω^(-1),电阻率ρ为3.79×10^(-4)Ω·cm,可见光平均透过率约为80%,载流子浓度n为6.88×10^(20)cm^(-3),迁移率μ为13.31 cm^(2)·V^(-1)·s^(-1)。Ni-doped FTO thin films were prepared by aerosol-assisted chemical vapor deposition(AACVD)using monobutyltin trichloride(MBTC)as tin source,ammonium fluoride(NH_(4)F)as fluorine source,methanol as solvent,and nickel chloride hexahydrate(NiCl_(2)·6H_(2)O)as nickel source.The optical and electrical properties of FTO thin films were characterized and analyzed by spectrophotometer,four-probe resistor meter and Hall effect tester.The electronic structure of doped system was calculated based on first principles as well.The results indicate that the Ni-doped FTO thin films are tetragonal rutile structure,and the conductivity is improved.When Ni/Sn is 2%(atomic fraction),the quality factor Φ_(TC) reaches 3×10^(-2)Ω^(-1),the resistivityρis 3.79×10^(-4)Ω·cm,the average transmittance of visible light is about 80%,the carrier concentration n is 6.88×1020 cm-3,and the mobilityμis 13.31 cm^(2)·V^(-1)·s^(-1).

关 键 词：镍掺杂 FTO薄膜 气溶胶辅助化学气相沉积 电学性质 第一性原理 

分 类 号：TB43[一般工业技术]