多孔GaN薄膜的制备与光学性能研究  

Preparation and Optical Properties of Porous GaN Thin Films

作　　者：詹廷吾 贾伟[1,2] 董海亮 李天保[1,3] 贾志刚 许并社[1,2,4] ZHAN Tingwu;JIA Wei;DONG Hailiang;LI Tianbao;JIA Zhigang;XU Bingshe(Key Laboratory of Interface Science and Engineering in Advanced Materials,Ministry of Education,Taiyuan University of Technology,Taiyuan 030024,China;Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering,Taiyuan 030032,China;College of Materials Science and Engineering,Taiyuan University of Technology,Taiyuan 030024,China;Institute of Atomic and Molecular Science,Shaanxi University of Science and Technology,Xi’an 710021,China)

机构地区：[1]太原理工大学新材料界面科学与工程教育部重点实验室,太原030024 [2]山西浙大新材料与化工研究院,太原030032 [3]太原理工大学材料科学与工程学院,太原030024 [4]陕西科技大学材料原子·分子科学研究所,西安710021

出　　处：《人工晶体学报》2023年第9期1599-1608,共10页Journal of Synthetic Crystals

基　　金：山西浙大新材料与化工研究院资助项目(2021SX-AT002);山西省重点研发项目(201903D111009);国家自然科学基金(61604104,21972103,61904120);山西省自然科学基金(201901D111109)。

摘　　要：将表面沉积有金纳米颗粒的GaN薄膜在H 2与N 2的混合气氛下进行高温退火,成功制备了多孔GaN薄膜。多孔GaN薄膜的表面形貌可通过退火温度、退火时间及金沉积时间等参数进行调控。利用高分辨X射线衍射(HRXRD)和拉曼光谱表征了不同GaN结构的晶体质量,与平面GaN薄膜相比,多孔GaN薄膜的位错密度和残余应力均有所降低,在退火温度为1000℃时其位错密度最小,应力的释放程度较大。采用光致发光(PL)光谱表征了其光学性质,与平面GaN薄膜相比,多孔GaN薄膜的发光强度显著提高,这可归因于多孔结构的孔隙率增大,有效增加了光的散射能力。此外,通过电化学工作站测试了不同GaN结构的光电流密度,结果表明,具有更大比表面积的多孔GaN薄膜在作为工作电极时,光电流密度是平面GaN薄膜的2.67倍。本文通过高温刻蚀手段成功制备了多孔GaN薄膜,为GaN外延层晶体质量与光学性能的提升及在光电催化等领域中的应用提供了一定的理论指导。Porous GaN thin films were successfully prepared by high-temperature annealing of GaN thin films with Au nanoparticles deposited on their surfaces in H 2 and N 2 atmosphere.The surface morphology of the porous structure can be regulated by parameters such as annealing temperature,annealing time and Au deposition time.The crystal quality of different GaN structures was characterized by high-resolution X-ray diffraction(HRXRD)and Raman spectroscopy.Compared with planar GaN,the dislocation density and residual stress of porous GaN are reduced.When the annealing temperature is 1000℃,the dislocation density is the lowest and more compressive stress is released.The optical properties of the porous GaN were characterized by photoluminescence(PL)spectroscopy.Compared with planar GaN,the luminous intensity of porous GaN is significantly improved,which can be attributed to the increased porosity of the porous structure,and therefore effectively increased light scattering.In addition,the photocurrent density of different GaN structures was tested by electrochemical work station,and the results confirm that the photocurrent density of porous GaN with larger specific surface area can be increased by about 1.67 times when used as a working electrode.Porous GaN thin films through high-temperature etching are successfully prepared in this paper,which providing some theoretical guidance for the improvement of the crystal quality and optical properties of the GaN epitaxial layer,and also shed some light on its application in the fields of photoelectric catalysis.

关 键 词：多孔GaN薄膜 氢气氛 高温退火 金纳米颗粒 催化剂 光学性能 光电流密度 

分 类 号：O734[理学—晶体学] O484