基于混合导电机制的新型TMOSFET三值逻辑反相器  

A novel TMOSFET ternary inverter based on hybrid conduction mechanism

作　　者：马鑫 芦宾 董林鹏 苗渊浩 Ma Xin;Lu Bin;Dong Lin-Peng;Miao Yuan-Hao(School of Physics and Information Engineering,Shanxi Normal University,Taiyuan 030031,China;Shaanxi Province Key Laboratory of Thin Films Technology and Optical Test,Xi’an Technological University,Xi’an 710032,China;Key Laboratory of Microelectronic Devices and Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)

机构地区：[1]山西师范大学物理与信息工程学院,太原030031 [2]西安工业大学,陕西省薄膜技术与光学检测重点实验室,西安710032 [3]中国科学院微电子研究所,微电子器件与集成技术重点实验室,北京100029

出　　处：《物理学报》2023年第18期362-371,共10页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:62004119);山西省应用基础研究计划(批准号:201901D211400)资助的课题。

摘　　要：三值逻辑技术相比于二值逻辑,不仅能够提高芯片信息密度,还能进一步降低电路功率损耗和系统设计复杂度.然而采用传统的二值逻辑器件搭建三值逻辑电路所需要的元器件数量较多,而且需借助无源元件,这反而牺牲了三值逻辑的优势.借助新型的二维材料也可以实现三值逻辑器件,这种方式需要的元器件数量少,且不需要借助无源元件,但是却面临制备工艺不成熟无法批量生产的问题.目前还没有能够兼容于传统互补金属氧化物半导体工艺的低功耗三值逻辑门电路,针对这一问题,本文将载流子隧穿机制与漂移扩散机制相结合,提出混合机制的隧穿金属氧化物半导体场效应晶体管(TMOSFET),并对其工作原理进行了深入分析,研究了基于TMOSFET的三值逻辑反相器工作原理,分析了三值逻辑反相器输出3种状态所对应输入电压范围相当的必要条件,对于后续三值逻辑电路设计具有一定的借鉴意义.With the development of complementary metal-oxide semiconductor(CMOS)technology,the feature size of mental-oxide-semiconductor field-effect-transistor(MOSFET)is continuously shrunk,the short channel effect becomes more and more serious,which makes the static power consumption increase,and now the static power consumption becomes a main source of the power consumption of the integrated circuits.Currently,the performance of CMOS binary logic processor is approaching a bottleneck;therefore the ternary logic becomes a research hotspot to promote the development of high-performance low-power integrated circuits.Compared with binary logic,ternary logic possesses a strong data expression capability,which can not only improve the data density,but also reduce the circuit power consumption and the system complexity.However,using binary devices to build ternary logic circuits requires a large number of components,and even the passive components,which makes it impossible to leverage the advantages of ternary logic.The other method of implementing ternary logic is to utilize innovative two-dimensional materials.This method requires a small number of components and obviates the need for passive components,but it faces the problem that the fabrication process is not mature and cannot be mass-produced.To solve these problems,in this paper by combining the tunneling and the drift diffusion mechanism,we propose a tunneling metal-oxide-semiconductor field-effect transistor(TMOSFET)with three-state characteristics that make it highly suitable for ternary logic design.Compared with other ternary logic schemes,the ternary inverter based on TMOSFET has the same circuit structure as binary inverter,which can simplify the circuit design.In this paper,the operational mechanism of this ternary inverter is studied,and the condition of three-state output of inverter is analyzed.It is found that when the operating voltage V_(DD)and the device turning voltage Vturn satisfy V_(DD)/V_(turn)≈1.4,the input voltage ranges of the three output stat

关 键 词：隧穿场效应晶体管 金属氧化物半导体场效应晶体管 三值逻辑反相器 

分 类 号：TN386[电子电信—物理电子学]