C波段高效率内匹配功率放大器设计  

Design of high efficiency internal matching power amplifier of C band

作　　者：刘鸿睿 赵宏亮[1] 尹飞飞[1] Liu Hongrui;Zhao Hongliang;Yin Feifei(School of Physics,Liaoning University,Shenyang 110036,China)

机构地区：[1]辽宁大学物理学院,辽宁沈阳110036

出　　处：《电子技术应用》2023年第9期58-62,共5页Application of Electronic Technique

基　　金：辽宁省自然科学基金(2021-MS-148)。

摘　　要：阐述了一款内匹配功率放大器的设计过程和测试结果。该放大器工作在5~5.8 GHz,采用氮化镓HEMT工艺,在28 V漏极供电电压下实现了48 dBm输出功率和55%功率附加效率。同时,该内匹配放大器将栅极和漏极偏置电路设计在芯片内部,无需在外部设计偏置电路,在保证功放性能的同时实现了小型化。该设计充分体现了GaN内匹配电路的高功率、高效率、小型化的优势。The design process and measurement results of an internal matching power amplifier are detailed in this paper.This amplifier with GaN HEMT process operates at 5~5.8 GHz.It achieves output power of 48 dBm and power added efficiency of 55%with supply voltage of 28 V.Meanwhile,the bias circuits are integrated in the chip instead of extra off-chip bias circuits,hence it combines the performance and miniaturization.It fully reflects the advantages of high power,high efficiency and miniaturization of GaN internal matching circuit.

关 键 词：内匹配 功率放大器 C波段 高效率 

分 类 号：TN722.7[电子电信—电路与系统]