低温暗退火对TOPCon结构钝化性能的影响  

EFFECT OF LOW TEMPERATURE DARK ANNEALING ON PASSIVATION PROPERTIES OF TOPCon STRUCTURE

作　　者：黄嘉斌 李明 赵增超 陈骏 周小荣 邓新新 Huang Jiabin;Li Ming;Zhao Zengchao;Chen Jun;Zhou Xiaorong;Deng Xinxin(Hunan Red Solar Photoelectricity Science and Technology Co.,Ltd.,National Engineering Research Center of Photovoltaic Equipment(NCPVE),Changsha 410000,China)

机构地区：[1]湖南红太阳光电科技有限公司,国家光伏装备工程技术研究中心,长沙410000

出　　处：《太阳能》2023年第9期60-66,共7页Solar Energy

摘　　要：n型隧穿氧化层钝化接触(TOPCon)结构用等离子体增强化学气相沉积(PECVD)方法制备,完成高温快速烧结后,再经过低温暗退火可以极大地提升钝化接触的性能,主要表现在隐含开路电压上升和饱和电流密度下降,其原理是通过低温暗退火的方法激活氢原子,使SiNx:H中的氢原子向内部扩散,Si-SiO2界面进一步氢钝化来提高钝化性能。研究结果表明:钝化膜层的质量、暗退火工艺的退火温度和退火时间等对钝化性能提升有很大影响。在最佳退火条件下,获得了6137μs和0.7422 V的高少子寿命和高隐含开路电压,以及3.66fA/cm^(2)的低饱和电流密度。The n-TOPCon structure is prepared by PECVD method.It is found that the passivation contact performance could be greatly improved by low temperature dark annealing after high temperature and rapid sintering,which is displayed by the increase of implied open circuit voltage and the decrease of saturation current density.The principle is that the hydrogen atom is activated by low temperature dark annealing,so that the hydrogen atom inside the silicon wafer will be diffused from the inside,and the Si-SiO2 interface will be further hydrogenated passivation to improve the passivation performance.The research resutts show that the quality of passivation film,annealing temperature and annealing time during dark annealing process have great influence on the improvement of passivation performance.Under the optimal annealing conditions,high minority lifetime,high implied open circuit voltage,low saturation current density of 6137μs,0.7422 V and 3.66 fA/cm^(2) are obtained.

关 键 词：低温暗退火 TOPCon结构 钝化性能 多晶硅太阳电池 

分 类 号：TM914.41[电气工程—电力电子与电力传动]