Low-temperature metal–oxide thin-film transistor technologies for implementing flexible electronic circuits and systems  

作　　者：Runxiao Shi Tengteng Lei Zhihe Xia Man Wong 

机构地区：[1]State Key Laboratory of Advanced Displays and Optoelectronics and Technologies,Department of Electronic and Computer Engineering,The Hong Kong University of Science and Technology,Hong Kong,China

出　　处：《Journal of Semiconductors》2023年第9期3-10,共8页半导体学报（英文版）

基　　金：supported by Grant RGC 16215720 from the Science and Technology Program of Shenzhen under JCYJ20200109140601691;Grant GHP/018/21SZ from the Innovation and Technology Fund;Grant SGDX20211123145404006 from the Science and Technology Program of Shenzhen;Fundamental and Applied Fundamental Research Fund of Guangdong Province 2021B1515130001。

摘　　要：Here we review two 300℃metal–oxide(MO)thin-film transistor(TFT)technologies for the implementation of flexible electronic circuits and systems.Fluorination-enhanced TFTs for suppressing the variation and shift of turn-on voltage(VON),and dual-gate TFTs for acquiring sensor signals and modulating VON have been deployed to improve the robustness and performance of the systems in which they are deployed.Digital circuit building blocks based on fluorinated TFTs have been designed,fabricated,and characterized,which demonstrate the utility of the proposed low-temperature TFT technologies for implementing flexible electronic systems.The construction and characterization of an analog front-end system for the acquisition of bio-potential signals and an active-matrix sensor array for the acquisition of tactile images have been reported recently.

关 键 词：flexible electronics metal-oxide semiconductor thin-film transistor dual gate FLUORINATION analog front-end system sensors 

分 类 号：TN321.5[电子电信—物理电子学]