Advances in mobility enhancement of ITZO thin-film transistors:a review  

作　　者：Feilian Chen Meng Zhang Yunhao Wan Xindi Xu Man Wong Hoi-Sing Kwok 

机构地区：[1]College of Electronic and Information Engineering,Shenzhen University,Shenzhen 518060,China [2]Institute of Microscale Optoelectronics(IMO),Shenzhen University,Shenzhen 518060,China [3]State Key Laboratory of Advanced Displays and Optoelectronics Technologies,The Hong Kong University of Science and Technology,Clear Water Bay,Kowloon,Hong Kong,China

出　　处：《Journal of Semiconductors》2023年第9期11-25,共15页半导体学报（英文版）

基　　金：financially supported in part by Shenzhen Municipal Research Program(Grant NO.SGDX20211123145404006);in part by National Natural Science Foundation of China(Grant NO.62274111);in part by Guangdong Basic and Applied Basic Research Foundation(Grant NO.2021A1515011858);in part by Innovation and Technology Fund of Hong Kong(Grant NO.GHP/018/21SZ)。

摘　　要：Indium-tin-zinc oxide(ITZO)thin-film transistor(TFT)technology holds promise for achieving high mobility and offers significant opportunities for commercialization.This paper provides a review of progress made in improving the mobility of ITZO TFTs.This paper begins by describing the development and current status of metal-oxide TFTs,and then goes on to explain the advantages of selecting ITZO as the TFT channel layer.The evaluation criteria for TFTs are subsequently introduced,and the reasons and significance of enhancing mobility are clarified.This paper then explores the development of high-mobility ITZO TFTs from five perspectives:active layer optimization,gate dielectric optimization,electrode optimization,interface optimization,and device structure optimization.Finally,a summary and outlook of the research field are presented.

关 键 词：thin-film transistor(TFT) indium-tin-zinc oxide(ITZO)TFT MOBILITY active matrix(AM)displays 

分 类 号：TN321.5[电子电信—物理电子学]