Fluorination-mitigated high-current degradation of amorphous InGaZnO thin-film transistors  

作　　者：Yanxin Wang Jiye Li Fayang Liu Dongxiang Luo Yunping Wang Shengdong Zhang Lei Lu 

机构地区：[1]School of Electronic and Computer Engineering,Peking University Shenzhen Graduate School,Shenzhen 518055,China [2]Huangpu Hydrogen Innovation Center/Guangzhou Key Laboratory for Clean Energy and Materials,School of Chemistry and Chemical Engineering,Guangzhou University,Guangzhou 510006,China [3]Institute of Microelectronics,Peking University,Beijing 100871,China

出　　处：《Journal of Semiconductors》2023年第9期57-61,共5页半导体学报（英文版）

基　　金：supported by National Key Research and Development Program under Grant No.2022YFB3607100;Shenzhen Research Programs under Grant Nos.JCYJ20200109140601691,JCYJ20190808154803565,SGDX20201103095607022,SGDX20211123145404006,and GXWD20201231165807007-20200807025846001。

摘　　要：As growing applications demand higher driving currents of oxide semiconductor thin-film transistors(TFTs),severe instabilities and even hard breakdown under high-current stress(HCS)become critical challenges.In this work,the triggering voltage of HCS-induced self-heating(SH)degradation is defined in the output characteristics of amorphous indium-galliumzinc oxide(a-IGZO)TFTs,and used to quantitatively evaluate the thermal generation process of channel donor defects.The fluorinated a-IGZO(a-IGZO:F)was adopted to effectively retard the triggering of the self-heating(SH)effect,and was supposed to originate from the less population of initial deep-state defects and a slower rate of thermal defect transition in a-IGZO:F.The proposed scheme noticeably enhances the high-current applications of oxide TFTs.

关 键 词：amorphous indium-gallium-zinc oxide(a-IGZO) thin-film transistors(TFTs) current stress self-heating(SH) FLUORINATION 

分 类 号：TN321.5[电子电信—物理电子学]