全桥DC-DC变换器中SiC器件损耗分析  

Loss Analysis of SiC Devices in Full-bridge DC-DC Converter

作　　者：李赫 郝欣 赵千淇 程旭峰 LI He;HAO Xin;ZHAO Qian-qi;CHENG Xu-feng(Hebei University of Science and Technology,Shijiazhuang 050018,China;Infineon TechnologyCo.,Ltd.,Shanghai 201210,China)

机构地区：[1]河北科技大学机械工程学院,石家庄050018 [2]英飞凌科技(中国)有限公司,上海201210

出　　处：《科学技术与工程》2023年第26期11216-11223,共8页Science Technology and Engineering

基　　金：教育部产学合作协同育人项目(220501768073535);河北省重点研发计划(20312205D)。

摘　　要：目前以碳化硅(SiC)MOSFET为代表的第三代宽禁带半导体有着高工作频率、低开关损耗、耐热性高等优点,可以有效地降低DC/DC变换器的整体损耗,提升电能转换效率。在以金属氧化物半导体场效晶体管(metal-oxide-semiconductor field-effect transistor,MOSFET)和绝缘栅双极型晶体管(insulated gate bipolar transistor,IGBT)作为开关器件的全桥DC-DC变换器中,软开关技术的使用虽然会导致循环电流和较大的电流纹波,产生额外的损耗,但一般该损耗远低于开关损耗,可以有效降低变换器整体损耗。但对于SiC MOSFET全桥DC-DC变换器,碳化硅器件的开关损耗很低,可能会低于软开关技术的额外损耗,因此软开关技术在SiC MOSFET中的有效性面临挑战。采用英飞凌官方提供的型号为IMZA120R014M1H的SiC MOSFET的PLECS热仿真模型,对其在全桥DC-DC变换器中的软开关和硬开关损耗进行了全面的仿真实验和分析,以探究软开关技术在SiC MOSFET全桥DC-DC变换器中的有效性,同时提供一种变换器开关损耗和总体损耗研究的方法。实验结果表明,在100 kHz的SiC MOSFET主流工作频率下,软开关的开关损耗和总体损耗仍旧远低于硬开关,软开关技术在基于SiC器件的全桥DC-DC变换器中仍旧具有重要的作用和意义。At present,the third generation wide band gap semiconductor represented by silicon carbide(SiC)MOSFET has the advantages of high operating frequency,low switching loss,high heat resistance,etc.,which can effectively reduce the overall loss of DC/DC converter and improve the power conversion efficiency.In the full-bridge DC-DC converter with MOSFET and IGBT as switching devices,the use of soft switching technology will lead to circulating current and large current ripple,resulting in additional losses,but generally this loss is far lower than the switching loss,which can effectively reduce the overall loss of the converter.However,for SiC MOSFET full-bridge DC-DC converters,the switching loss of silicon carbide devices is very low,which may be lower than the additional loss of soft switching technology.Therefore,the effectiveness of soft switching technology in SiC MOSFET is facing challenges.The PLECS thermal simulation model of SiC MOSFET with the model of IMZA120R014M1H officially provided by Infineon was used to conduct a comprehensive simulation experiment and analysis of its soft switching and hard switching losses in the full-bridge DC-DC converter,in order to explore the effectiveness of soft switching technology in the SiC MOSFET full-bridge DC-DC converter,and provide a method to study the switching losses and total losses of the converter.The experimental results show that at the mainstream operating frequency of 100 kHz SiC MOSFET,the switching loss and total loss of soft switch are still far lower than that of hard switch.Soft switch technology still plays an important role and significance in the full-bridge DC-DC converter based on SiC devices.

关 键 词：SiC MOSFET 开关损耗 软开关 DC-DC变换器 

分 类 号：TM133[电气工程—电工理论与新技术]