SiC MOS在有源功率因数校正电路中的应用  

Application of SiC MOS in active power factor correction circuit

作　　者：韩芬[1] HAN Fen(Department of Electrical and Information Engineering,Xi'an Jiaotong University City College,Shaanxi Xi'an 710018,China)

机构地区：[1]西安交通大学城市学院电气与信息工程系,陕西西安710018

出　　处：《工业仪表与自动化装置》2023年第5期112-114,共3页Industrial Instrumentation & Automation

摘　　要：为了提高开关电源的工作频率,降低开关损耗,减少电磁污染等,采用第三代半导体功率器件SiC MOS代替传统的Si MOS,同时采用有源功率因数校正技术来提高开关电源的利用率。该文分析了整个电路的工作原理,利用Matlab仿真软件对电路进行了仿真。仿真结果表明,在开关电源中使用SiC MOS可以提高开关频率,降低开关损耗,提高电源的利用率。功率因数可达0.998以上,负载上输出的直流电压稳定,纹波电压误差小。In order to improve the working frequency of switching power supply,reduce switching loss,reduce electromagnetic pollution and so on,the third generation semiconductor power device SiC MOS is used to replace the tradition Si MOS,and the active power factor correction technology is used to improve the utilization rate of switching power supply.This paper analyzes the working principle of the whole circuit,and simulates the circuit with Matlab simulation software.The simulation results show that the use of SiC MOS in the switching power supply can improve the switching frequency,reduce the switching loss,and improve the utilization rate of the power supply.The power factor is close to 0.998 or more.The output DC voltage on the load is stable and the ripple voltage error is small.

关 键 词：SiC MOS 开关电源 功率因数校正 开关损耗 

分 类 号：TN386.1[电子电信—物理电子学]