液态淀积法制备氧化铪薄膜  

Liquid Deposition Method of Hafnium Oxide Thin Films

作　　者：刘义锋 聂君扬 张恺馨 林畅 李敏 严群[1,2,5] 孙捷 LIU Yifeng;NIE Junyang;ZHANG Kaixin;LIN Chang;LI Min;YAN Qun;SUN Jie(National and Local United Engineering Laboratory of Flat Panel Display Technology,Fuzhou University,and Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China,Fuzhou 350100,CHN;Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China,Fuzhou 350100,CHN;Quantum Device Physics Laboratory,Chalmers University of Technology,Göteborg 41296,Sweden;Faculty of Electronic and Information Engineering,Xi’an Jiaotong University,Xi’an710049,CHN;Rich Sense Electronics Technology Co.,Ltd.,Quanzhou Fujian 362200,CHN)

机构地区：[1]福州大学平板显示技术国家地方联合工程实验室,中国福建光电信息科学与技术创新实验室,福州350100 [2]中国福建光电信息科学与技术创新实验室,福州350100 [3]瑞典查尔摩斯理工大学,量子器件物理实验室,哥德堡41296 [4]西安交通大学电信学部,西安710049 [5]晋江市博感电子科技有限公司,泉州362200

出　　处：《光电子技术》2023年第3期212-217,共6页Optoelectronic Technology

基　　金：福建省科技厅项目(2021HZ0114,2021J01583,2021L3004);中国福建光电信息科学与技术创新实验室项目(2021ZZ122)。

摘　　要：采用成本低廉、操作简单的液态淀积法成功制备了HfO_(2)薄膜,分析了液态淀积法制备氧化铪薄膜的反应机理,测试了薄膜的表面形貌、组成成分,以及光学特性和电学性能。结果表明:液态淀积法制备的氧化铪薄膜结构致密且连续,化学组分纯正;经过500℃退火后,氧化铪薄膜的透光率在92%以上;以40 nm氧化铪为电介质制成平板电容后,当电压为1 V时漏电流密度是3.56×10^(-7)A/cm^(2);1 MHz频率下的电容值为1.05 nF,经计算得出介电常数为18.9。液态淀积法制备氧化铪薄膜的成功,为使用氧化铪薄膜作为Micro LED器件的侧壁钝化层提供了一种成本低廉、工艺简便的方法。HfO_(2)films were successfully prepared by low-cost and easy-to-operate liquid deposition method,and the surface appearance,composition,optical characteristics,and electrical properties of HfO_(2)thin films generated by liquid deposition method were studied,as well as the reaction mechanism.The results revealed that the chemical composition of HfO_(2)thin films generated by liquid deposition method was pure and the structure was dense and continuous.The transmittance of HfO_(2)films after annealing at 500℃was greater than 92%;after making a plate capacitor with 40 nm hafnium oxide as the dielectric,the leakage current density at the voltage of 1 V was 3.56×10^(-7)A/cm^(2);the capacitance value at the 1 MHz frequency was 1.05 nF,yielding a calculated permittivity of 18.9.The successful preparation of hafnium oxide thin film by liquid deposition could provide a low-cost and simple method for using hafnium oxide thin film as the passivation layer of Micro LED devices.

关 键 词：液态淀积法 氧化铪薄膜 微米级发光二极管显示器 

分 类 号：TN305[电子电信—物理电子学] O711[理学—晶体学]