类四方BiFeO_(3)薄膜中新型极化拓扑结构研究  

Study on the novel polar topological structures of T⁃like BiFeO_(3)films

作　　者：陈双杰 唐云龙 朱银莲 马秀良 CHEN Shuang-jie;TANG Yun-long;ZHU Yin-lian∗;MA Xiu-liang(Shenyang National Laboratory for Materials Science,Institute of Metal Research,Chinese Academy of Sciences,Shenyang Liaoning 110016;School of Materials Science and Engineering,University of Science and Technology of China,Shenyang Liaoning 110016;Bay Area Center for Electron Microscopy,Songshan Lake Materials Laboratory,Dongguan Guangdong 523808;Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China)

机构地区：[1]中国科学院金属研究所沈阳材料科学国家研究中心,辽宁沈阳110016 [2]中国科学技术大学材料科学与工程学院,辽宁沈阳110016 [3]松山湖材料实验室大湾区显微科学与技术研究中心,广东东莞523808 [4]中国科学院物理研究所,北京100190

出　　处：《电子显微学报》2023年第4期424-432,共9页Journal of Chinese Electron Microscopy Society

基　　金：国家自然科学基金资助项目(No.51971223).

摘　　要：结合像差校正透射电子显微术和精密脉冲激光沉积技术,本文研究了生长在LaAlO_(3)衬底上的单层铁电BiFe_(3)薄膜中应变调控和缺陷诱导的极化涡旋拓扑畴组态。HAADF⁃STEM成像揭示了薄膜中的层状BiO^(+)面缺陷有助于稳定畴壁面为(100)型的类180°畴结构,并在这种新型的180°畴壁和LaAlO_(3)界面相交区域诱导形成了半涡旋和极化涡旋拓扑结构。Combined with aberration⁃corrected scanning transmission electron microscopy and pulsed laser deposition,this work presents the strai⁃mediated and defects⁃induced topological vortex domain configurations in monolayer ferroelectric BiFe_(3)films grown on LaAlO_(3)substrates.HAADF⁃STEM images indicate that the 180°⁃like domain structures with(100)⁃type domain walls can be stabilized by layered BiO^(+)planar defects.Besides,the semi⁃vortex and polar vortex topologies are generated at the intersection regions of the novel 180°⁃like domain walls and LaAlO_(3)interface.

关 键 词：半涡旋-涡旋 180°畴壁 像差校正电子显微学 类四方BiFeO_(3)薄膜 

分 类 号：TB383[一般工业技术—材料科学与工程] O77[理学—晶体学] TG115.215.3[金属学及工艺—物理冶金]