氯化铯掺杂氧化锡电子传输层提升钙钛矿太阳能电池光电性能  

Cesium Chloride Doped Tin Oxide Electron Transport Layer Improves the Photoelectric Performance of Perovskite Solar Cells

作　　者：蔡旭东[1] 朱培龙 晏广元 刘瑞 于华 Cai Xu-dong;Zhu Pei-long;Yan Guang-yuan;Liu Rui;Yu Hua

机构地区：[1]西南石油大学新能源与材料学院,四川成都610500

出　　处：《化工设计通讯》2023年第9期151-152,157,共3页Chemical Engineering Design Communications

摘　　要：通过氯化铯(CsCl)掺杂氧化锡(SnO_(2))电子传输层(ETL)提升钙钛矿太阳能电池(PSCs)光电性能,探究掺杂ETL提升PSCs光电性能的机理。研究发现,CsCl掺杂降低了SnO2薄膜表面粗糙度,并提升其电导率,同时CsCl掺杂钝化了ETL/PVK界面处缺陷。PSCs器件的短路电流密度达到23.49mA/cm^(2),光电转换效率(PCE)达到22.16%。Cesium chloride(CsCl)doping tin oxide(SnO2)electron transport layer(ETL)was used to improve the photoelectric performance of perovskite solar cells(PSCs),and the mechanism of doping ETL to improve the photoelectric performance of PSCs was explored.It was found that CsCl doping reduced the surface roughness of SnO2 film,and improved its conductivity,while CsCl doping passivated the defects at the ETL/PVK interface.The short-circuit current density(JSC)of the device reached 23.49 mA/cm^(2),and the photoelectric conversion efficiency(PCE)reached 22.16%.

关 键 词：钙钛矿太阳能电池 氧化锡电子传输层 氯化铯 掺杂 

分 类 号：TM914.42[电气工程—电力电子与电力传动]