钴掺杂对氧化锌(ZnO)压敏陶瓷的影响  

Electrical performance of ZnO varistor ceramics with cobalt doped

作　　者：周利斌 陈红霖 曹文斌 刘建科 ZHOU Libin;CHEN Honglin;CAO Wenbin;LIU Jianke(Semiconductor Materials and Devices Research Center,School of Arts and Sciences,Shaanxi University of Science&Technology,Xi'an 710021,China)

机构地区：[1]陕西科技大学文理学院,半导体材料与器件研究中心,西安710021

出　　处：《功能材料》2023年第9期9197-9202,共6页Journal of Functional Materials

基　　金：国家自然科学基金项目(51802183);陕西科技大学博士科研启动基金项目(2017BJ-23)。

摘　　要：钴(Co)作为添加剂对氧化锌(ZnO)压敏陶瓷微观结构和电性能有显著影响。采用传统固相烧结法,以ZnO-Bi_(2)O_(3)-Sb 2O_(3)-MnO_(2)-Cr 2O_(3)作为基础配方,分别掺杂了三氧化二钴(Co_(2)O_(3))和四氧化三钴(Co_(3)O_(4))来制备ZnO压敏陶瓷,并对比了两种掺杂下样品的微观结构和电学性能,发现掺杂Co_(2)O_(3)的样品平均晶粒尺寸大于掺杂Co_(3)O_(4)的样品。另外,掺杂Co_(3)O_(4)的ZnO压敏陶瓷样品具有较高的非线性系数51.40,较高的压敏场强338.29 V/mm,较低的漏电流密度1.33μA/cm^(2),以及较高的势垒高度0.69 eV,综合性能比较优异。因此,相较于Co_(2)O_(3),Co_(3)O_(4)可以更好地改善ZnO压敏陶瓷性能。Cobalt(Co)as an additive has a remarkable impact on the microstructure and electrical properties of zinc oxide(ZnO)varistor ceramics.In this paper,ZnO varistor ceramics were prepared by the conventional solid-phase method,based on the basic formula of ZnO-Bi_(2)O_(3)-Sb 2O_(3)-MnO_(2)-Cr 2O_(3)with Co_(2)O_(3)doped and Co_(3)O_(4)doped respectively,and their microstructure and electrical properties were compared.It is found that doped Co mainly affects the average grain size of ZnO varistor ceramics,and the average grain size of samples doped Co_(2)O_(3)is greater than that of samples doped Co_(3)O_(4).In addition,the Co_(3)O_(4)doped samples has a higher nonlinear coefficient of 51.40,a higher breakdown field of 338.29 V/mm,a lower leakage current density of 1.33μA/cm^(2),and a higher barrier height of 0.69 eV,which has excellent comprehensive performance.Therefore,Co_(3)O_(4)is better than Co_(2)O_(3)to improve microstructure and electrical properties of ZnO varistor ceramic.

关 键 词：氧化锌压敏陶瓷 固相烧结 钴掺杂 平均晶粒尺寸 电学性能 

分 类 号：TQ174[化学工程—陶瓷工业]