基于FinFET器件结构的高精度温度传感器设计  

High precision temperature sensor based on FinFET device structure

作　　者：莫啸 孔德鑫 李冬 孙金中 MO Xiao;KONG De-xin;LI Dong;SUN Jin-zhong(No.38 Institute,China Electronic Technology Group Corporation)

机构地区：[1]安徽芯纪元科技有限公司,中国电子科技集团公司第三十八研究所

出　　处：《中国集成电路》2023年第10期34-38,62,共6页China lntegrated Circuit

摘　　要：随着标准CMOS工艺向二十纳米以下推进,平面CMOS晶体管开始向三维(3D)FinFET器件结构过渡,寄生三极管的电流增益β大幅下降,使以寄生PNP管作为温度传感器件的温度传感电路不再适用。本文基于标准CMOS工艺,以寄生垂直NPN管作为温度传感器件,给出了三维FinFET器件结构下的数字温度传感器设计。该数字温度传感器在-55℃至+125℃的温度范围内,电路仿真精度达±0.2℃,芯片测试精度达±0.3℃。With the advancement of the standard CMOS process below 20 nm,the planar CMOS transistor began to transition to the three-dimensional(3D)FinFET device structure,and the current gain of the parasitic triode decreased significantly.The temperature sensing circuit with the parasitic PNP triobe as the temperature sensing device is no longer applicable.Based on the standard CMOS process and using vertical NPN triobe as temperature sensor,this paper gives the design of a temperature sensor based on 3D FinFET device structure.In the temperature range of-55℃to+125℃,the digital temperature sensor has the circuit simulation accuracy of±0.2℃and the chip test accuracy of±0.3℃.

关 键 词：3D FinFET结构 电流增益 垂直NPN管 数字温度传感器 

分 类 号：TP212.11[自动化与计算机技术—检测技术与自动化装置] TN386[自动化与计算机技术—控制科学与工程]