一种瞬态增强的无片外电容LDO设计  

Design of a Transient Enhanced Capacitor-Less Low Dropout Voltage Linear Regulator

作　　者：刘伟明 曹先国 李涛 李青鸿 LIU Wei-ming;CAO Xian-guo;LI Tao;LI Qing-hong(School of Automation and Information Engineering,Sichuan University of Science and Engineering;Sichuan Key Laboratory of artificial intelligence)

机构地区：[1]四川轻化工大学自动化与信息工程学院 [2]四川省人工智能重点实验室

出　　处：《中国集成电路》2023年第10期63-67,共5页China lntegrated Circuit

摘　　要：基于SMIC 0.18 um BCD工艺,采用自适应功率管技术和直接电压尖峰检测技术,设计了一种瞬态响应增强的无片外电容低压差线性稳压器。瞬态增强电路采用对称的频率补偿网络提高功率管瞬时摆率,抑制下冲;采用PMOS管组成的电荷泄放通路减小系统瞬时输出阻抗,抑制上冲。仿真结果显示:输入电压为3.5~4.5 V、漏失电压为100 mV时,系统最大输出电流为100 mA;线性调整率为0.04 mV/V,负载调整率为7.33 mV/A。负载电流在0~100 mA@1 us跳变时,上冲、下冲电压小于130 mV,建立时间小于1 us。Based on the SMIC 0.18 um BCD process,a transient response enhanced low dropout voltage linear regulator without external capacitors was designed with adaptive power transistor and direct voltage spike detection technology.The symmetrical frequency compensation network was used in the transient enhancement circuit to improve the instantaneous slew rate of the power transistor and suppress the undershoot;the charge discharge path composed of PMOS transistors reduced the instantaneous output impedance of the system and suppressed overshoot.The simulation results show that when input voltage is 3.5~4.5 V and the dropout voltage is 100 mV,the maximum output current of the system is 100 mA;The line regulation of the system is 0.04 mV/V and load regulation is 7.33 mV/A.When the load current changs from 0 to 100 mA@1 us,the overshoot and undershoot voltages are less than 130 mV with settling time less than 1 us.

关 键 词：无电容LDO 瞬态增强电路 电压尖峰检测 自适应功率管 

分 类 号：TN402[电子电信—微电子学与固体电子学]