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作 者:陈麒宇 杨西荣 李宗臻 毕津顺 习凯 张振兴 翟鹏飞 孙友梅 刘杰 Qiyu Chen;Xirong Yang;Zongzhen Li;Jinshun Bi;Kai Xi;Zhenxing Zhang;Pengfei Zhai;Youmei Sun;Jie Liu(Institute of Modern Physics,Chinese Academy of Sciences,Lanzhou 730000,China;School of Nuclear Science and Technology,University of Chinese Academy of Sciences,Beijing 100049,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Lanzhou University,Lanzhou 730000,China)
机构地区:[1]Institute of Modern Physics,Chinese Academy of Sciences,Lanzhou 730000,China [2]School of Nuclear Science and Technology,University of Chinese Academy of Sciences,Beijing 100049,China [3]Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China [4]Lanzhou University,Lanzhou 730000,China
出 处:《Chinese Physics B》2023年第9期364-368,共5页中国物理B(英文版)
基 金:the National Natural Science Foundation of China(Grant Nos.12105340,12035019,and12075290);the Youth Innovation Promotion Association of the Chinese Academy of Sciences(Grant No.2020412)。
摘 要:Heavy ion irradiation effects on charge trapping memory(CTM)capacitors with TiN/Al_(2)O_(3)/HfO_(2)/Al_(2)O_(3)/HfO_(2)/SiO_(2)/p-Si structure have been investigated.The ion-induced interface charges and oxide trap charges were calculated and analyzed by capacitance-voltage(C-V)characteristics.The C-V curves shift towards the negative direction after swift heavy ion irradiation,due to the net positive charges accumulating in the trapping layer.The memory window decreases with the increase of ion fluence at high voltage,which results from heavy ion-induced structural damage in the blocking layer.The mechanism of heavy ion irradiation effects on CTM capacitors is discussed in detail with energy band diagrams.The results may help to better understand the physical mechanism of heavy ion-induced degradation of CTM capacitors.
关 键 词:charge trapping memory(CTM) high-k dielectric stack heavy ion irradiation reliability
分 类 号:TP333[自动化与计算机技术—计算机系统结构] TM53[自动化与计算机技术—计算机科学与技术]
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