Doping tuned anomalous Hall effect in the van der Waals magnetic topological phases Mn(Sb_(1-x)Bi_(x))_(4)Te_(7)  

作　　者：张鑫 江志诚 袁健 侯骁飞 王霞 余娜 邹志强 刘正太 夏威 于振海 沈大伟 郭艳峰 Xin Zhang;Zhicheng Jiang;Jian Yuan;Xiaofei Hou;Xia Wang;Na Yu;Zhiqiang Zou;Zhengtai Liu;Wei Xia;Zhenhai Yu;Dawei Shen;Yanfeng Guo(School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China;State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;Analytical Instrumentation Center,School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China;National Synchrotron Radiation Laboratory,University of Science and Technology of China,Hefei 230029,China;ShanghaiTech Laboratory for Topological Physics,ShanghaiTech University,Shanghai 201210,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China [2]State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China [3]Analytical Instrumentation Center,School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China [4]National Synchrotron Radiation Laboratory,University of Science and Technology of China,Hefei 230029,China [5]ShanghaiTech Laboratory for Topological Physics,ShanghaiTech University,Shanghai 201210,China [6]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Chinese Physics B》2023年第9期422-426,共5页中国物理B（英文版）

基　　金：the Shanghai Science and Technology Innovation Action Plan(Grant No.21JC1402000);the National Natural Science Foundation of China(Grant No.12004405);the State Key Laboratory of Functional Materials for Informatics(Grant No.SKL2022);the Double FirstClass Initiative Fund of ShanghaiTech University,the Analytical Instrumentation Center(Grant No.SPST-AIC10112914);SPST,and ShanghaiTech University;the State Key Laboratory of Surface Physics and Department of Physics of Fudan University(Grant No.KF2022_13)。

摘　　要：The van der Waals(vdW)MnSb4Te7is a newly synthesized antiferromagnetic(AFM)topological insulator hosting a robust axion insulator state irrelative to the specific spin structure.However,the intrinsic hole doped character of MnSb_4Te_7makes the Fermi level far away from the Dirac point of about 180 meV,which is unfavorable for the exploration of exotic topological properties such as the quantum anomalous Hall effect(QAHE).To shift up the Fermi level close to the Dirac point,the strategy of partially replacing Sb with Bi as Mn(Sb_(1-x)Bi_(x))_(4)Te_(7)was tried and the magnetotransport properties,in particular,the anomalous Hall effect,were measured and analyzed.Through the electron doping,the anomalous Hall conductanceσAH changes from negative to positive between x=0.3 and 0.5,indicative of a possible topological transition.Besides,a charge neutrality point(CNP)also appears between x=0.6 and 0.7.The results would be instructive for further understanding the interplay between nontrivial topological states and the magnetism,as well as for the exploration of exotic topological properties.

关 键 词：anomalous Hall effect DOPING topological materials 

分 类 号：O469[理学—凝聚态物理]