Magnetic-field-controlled spin valve and spin memory based on single-molecule magnets  

作　　者：张正中 郭儒雅 薄锐 刘昊 Zhengzhong Zhang;Ruya Guo;Rui Bo;Hao Liu(Faculty of Mathematics and Physics,Huaiyin Institute of Technology,Huai'an 223003,China;Nano Science and Technology Institute,University of Science and Technology of China,Suzhou 215123,China)

机构地区：[1]Faculty of Mathematics and Physics,Huaiyin Institute of Technology,Huai'an 223003,China [2]Nano Science and Technology Institute,University of Science and Technology of China,Suzhou 215123,China

出　　处：《Chinese Physics B》2023年第9期474-480,共7页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant No.11404322);the Natural Science Foundation of Huai’an(Grant Nos.HAB202229 and HAB202150);the Natural Science Foundation of the Jiangsu Higher Education Institutions of China(Grant No.22KJD140002)。

摘　　要：A single-molecule magnet is a long-sought-after nanoscale component because it can enable us to miniaturize nonvolatile memory storage devices.The signature of a single-molecule magnet is switching between two bistable magnetic ground states under an external magnetic field.Based on this feature,we theoretically investigate a magnetic-fieldcontrolled reversible resistance change active at low temperatures in a molecular magnetic tunnel junction,which consists of a single-molecule magnet sandwiched between a ferromagnetic electrode and a normal metal electrode.Our numerical results demonstrate that the molecular magnetism orientation can be manipulated by magnetic fields to be parallel/antiparallel to the ferromagnetic electrode magnetization.Moreover,different magnetic configurations can be“read out”based on different resistance states or different spin polarization parameters in the current spectrum,even in the absence of a magnetic field.Such an external magnetic field-controlled resistance state switching effect is similar to that in traditional spin valve devices.The difference between the two systems is that one of the ferromagnetic layers in the original device has been replaced by a magnetic molecule.This proposed scheme provides the possibility of better control of the spin freedom of electrons in molecular electrical devices,with potential applications in future high-density nonvolatile memory devices.

关 键 词：single-molecule magnet spin dependent electron tunneling spin valve 

分 类 号：O469[理学—凝聚态物理]