High-temperature continuous-wave operation of 1310 nm InAs/GaAs quantum dot lasers  

作　　者：苏向斌 邵福会 郝慧明 刘汗青 李叔伦 戴德炎 尚向军 王天放 张宇 杨成奥 徐应强 倪海桥 丁颖 牛智川 Xiang-Bin Su;Fu-Hui Shao;Hui-Ming Hao;Han-Qing Liu;Shu-Lun Li;De-Yan Dai;Xiang-Jun Shang;Tian-Fang Wang;Yu Zhang;Cheng-Ao Yang;Ying-Qiang Xu;Hai-Qiao Ni;Ying Ding;Zhi-Chuan Niu(State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;Beijing Academy of Quantum Information Sciences,Beijing 100193,China;James Watt School of Engineering,University of Glasgow,Glasgow,G128LT,UK)

机构地区：[1]State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China [3]Beijing Academy of Quantum Information Sciences,Beijing 100193,China [4]James Watt School of Engineering,University of Glasgow,Glasgow,G128LT,UK

出　　处：《Chinese Physics B》2023年第9期510-513,共4页中国物理B（英文版）

基　　金：the Science and Technology Program of Guangzhou(Grant No.202103030001);the KeyArea Research and Development Program of Guangdong Province(Grant No.2018B030329001);the National Natural Science Foundation of China(Grant Nos.62035017,61505196,and 62204238);the Scientific Instrument Developing Project of the Chinese Academy of Sciences(Grant No.YJKYYQ20170032);the Major Program of the National Natural Science Foundation of China(Grant Nos.61790580 and 61790581);the Chinese Academy of Sciences and Changchun City Science and Technology Innovation Cooperation Project(Grant No.21SH06);Jincheng Key Research and Development Project(Grant No.20210209);the Key R&D Program of Shanxi Province(Grant No.202102030201004);the R&D Program of Guangdong Province(Grant Nos.2018B030329001 and2020B0303020001);Shenzhen Technology Research Project(Grant No.JSGG20201102145200001);the National Key Technologies R&D Program of China(Grant No.2018YFA0306100)。

摘　　要：Here we report 1.3μm electrical injection lasers based on InAs/GaAs quantum dots(QDs)grown on a GaAs substrate,which can steadily work at 110-℃without visible degradation.The QD structure is designed by applying the Stranski-Krastanow growth mode in solid source molecular beam epitaxy.The density of InAs QDs in the active region is increased from 3.8×10^(10)cm^(-2)to 5.9×10^(10)cm^(-2).As regards laser performance,the maximum output power of devices with lowdensity QDs as the active region is 65 m W at room temperature,and that of devices with the high-density QDs is 103 mW.Meanwhile the output power of high-density devices is 131 mW under an injection current of 4 A at 110-℃.

关 键 词：InAs/GaAs quantum dots high-operating-temperature laser molecular beam epitaxy(MBE) 

分 类 号：TN248[电子电信—物理电子学]