Analytical workload dependence of self-heating effect for SOI MOSFETs considering two-stage heating process  

作　　者：李逸帆 倪涛 李晓静 王娟娟 高林春 卜建辉 李多力 蔡小五 许立达 李雪勤 王润坚 曾传滨 李博 赵发展 罗家俊 韩郑生 Yi-Fan Li;Tao Ni;Xiao-Jing Li;Juan-Juan Wang;Lin-Chun Gao;Jian-Hui Bu;Duo-Li Li;Xiao-Wu Cai;Li-Da Xu;Xue-Qin Li;Run-Jian Wang;Chuan-Bin Zeng;Bo Li;Fa-Zhan Zhao;Jia-Jun Luo;Zheng-Sheng Han(Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100049,China;Key Laboratory of Science and Technology on Silicon Devices,Chinese Academy of Sciences,Beijing 100029,China)

机构地区：[1]Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China [2]University of Chinese Academy of Sciences,Beijing 100049,China [3]Key Laboratory of Science and Technology on Silicon Devices,Chinese Academy of Sciences,Beijing 100029,China

出　　处：《Chinese Physics B》2023年第9期522-529,共8页中国物理B（英文版）

摘　　要：Dynamic self-heating effect(SHE)of silicon-on-insulator(SOI)MOSFET is comprehensively evaluated by ultrafast pulsed I-V measurement in this work.It is found for the first time that the SHE complete heating response and cooling response of SOI MOSFETs are conjugated,with two-stage curves shown.We establish the effective thermal transient response model with stage superposition corresponding to the heating process.The systematic study of SHE dependence on workload shows that frequency and duty cycle have more significant effect on SHE in first-stage heating process than in the second stage.In the first-stage heating process,the peak lattice temperature and current oscillation amplitude decrease by more than 25 K and 4%with frequency increasing to 10 MHz,and when duty cycle is reduced to 25%,the peak lattice temperature drops to 306 K and current oscillation amplitude decreases to 0.77%.Finally,the investigation of two-stage(heating and cooling)process provides a guideline for the unified optimization of dynamic SHE in terms of workload.As the operating frequency is raised to GHz,the peak temperature depends on duty cycle,and self-heating oscillation is completely suppressed.

关 键 词：self-heating effect(SHE) silicon-on-insulator(SOI)MOSFETs thermal transient response WORKLOAD 

分 类 号：TN386[电子电信—物理电子学]