Ultra-high photoresponsive photodetector based on ReS_(2)/SnS_(2)heterostructure  

作　　者：王冰辉 邢艳辉 董晟园 李嘉豪 韩军 涂华垚 雷挺 贺雯馨 张宝顺 曾中明 Binghui Wang;Yanhui Xing;Shengyuan Dong;Jiahao Li;Jun Han;Huayao Tu;Ting Lei;Wenxin He;Baoshun Zhang;Zhongming Zeng(Key Laboratory of Opto-electronics Technology,Ministry of Education,College of Microelectronics,Beijing University of Technology,Beijing 100124,China;Nanofabrication Facility,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China)

机构地区：[1]Key Laboratory of Opto-electronics Technology,Ministry of Education,College of Microelectronics,Beijing University of Technology,Beijing 100124,China [2]Nanofabrication Facility,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China

出　　处：《Chinese Physics B》2023年第9期545-551,共7页中国物理B（英文版）

基　　金：the National Natural Science Foundation of China(Grant Nos.61574011,60908012,61575008,61775007,61731019,61874145,62074011,and 62134008);the Beijing Natural Science Foundation(Grant Nos.4182015,4172011,and 4202010);Beijing Nova Program(Grant No.Z201100006820096)。

摘　　要：Photodetectors based on two-dimensional materials have attracted much attention because of their unique structure and outstanding performance.The response speed of single ReS_(2)photodetector is slow exceptionally,the heterostructure could improves the response speed of ReS_(2)-based photodetector,but the photodetectors responsivity is reduced greatly,which restricts the development of ReS_(2).In this paper,a vertically structured ReS_(2)/SnS_(2)van der Waals heterostructure photodetectors is prepared,using ReS_(2)as the transport layer and SnS_(2)as the light absorbing layer to regulate the channel current.The device has an ultra-high photoconductive gain of 10^(10),which exhibits an ultra-high responsivity of4706 A/W under 365-nm illumination and response speed in seconds,and has an ultra-high external quantum efficiency of1.602×10^(6)%and a high detectivity of 5.29×10^(12)jones.The study for ReS_(2)-based photodetector displays great potential for developing future optoelectronic devices.

关 键 词：two-dimensional material ReS_(2) HETEROSTRUCTURE PHOTODETECTOR 

分 类 号：TN36[电子电信—物理电子学]