一种具有n型隐埋载流子存储层的BRT新结构  

A Novel BRT Structure with n-type Buried Carrier Storage Layer

作　　者：张超 王彩琳[1,2] 刘园园 杨武华 苏乐 ZHANG Chao;WANG Cailin;LIU Yuanyuan;YANG Wuhua;SU Le(Department of Electronic Engineering,Xi'an University of Technology,Xi'an,710048,CHN;Xi'an Key Laboratory of Power Electronic Devices and High Efficiency Power Conversion,Xi'an,710048,CHN)

机构地区：[1]西安理工大学,电子工程系,西安710048 [2]西安市电力电子器件与高效电能变换重点实验室,西安710048

出　　处：《固体电子学研究与进展》2023年第4期306-310,共5页Research & Progress of SSE

基　　金：陕西省教育厅科学研究计划项目(22JK0484);陕西省科技厅自然科学基础研究计划项目(2023-JC-QN-0764);陕西省重点研发计划子课题(2021LLRH-02);西安理工大学教师博士科研启动经费项目(103-451121007)。

摘　　要：提出了一种具有n型隐埋载流子存储层的基极电阻控制晶闸管(BRT)新结构。利用TCAD仿真软件对其工作机理和静态特性进行了分析,并与双栅BRT进行了性能对比。结果表明,新器件导通时会产生电子注入增强效应,由绝缘栅双极晶体管模式快速转换成晶闸管模式,当n型隐埋层浓度为8×10^(15)cm^(-3),隐埋层与p基区相接并与p++分流区距离接近时,能够有效抑制器件中的电压折回现象,获得良好的导通特性。新器件的导通压降为3.84 V,比传统器件减少了26%。A novel base resistance controlled thyristor(BRT)structure with n-type buried carrier storage layer was proposed.The working mechanism and static characteristics were analyzed by TCAD simulator and compared with the double gate BRT.The results show that the electron injec⁃tion enhancement effect will occur after the new device is turned on,and thus the IGBT mode is quick⁃ly converted to the thyristor mode.It can effectively suppress the snapback phenomenon in the device and achieve good conduction characteristics when the concentration of the n-type buried layer is 8×10^(15)cm^(-3) and the buried layer is connected to the p-base region and close to the p++shunt region.The conduction voltage drop of the new device is 3.84 V,which is 26%less than traditional device.

关 键 词：基极电阻控制晶闸管(BRT) 电子注入增强效应(IE) 载流子存储(CS) 

分 类 号：TN342.4[电子电信—物理电子学]