氧化限制结构940 nm垂直腔面发射激光器  

Oxide-Confined 940 nm Vertical Cavity Surface Emitting Lasers

作　　者：颜伟年 王秋华 周亨杰 邱平平 赵玲娟[1,2,3] 阚强 Yan Weinian;Wang Qiuhua;Zhou Hengjie;Qiu Pingping;Zhao Lingjuan;Kan Qiang(Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices,Beijing 100083,China)

机构地区：[1]中国科学院半导体研究所半导体材料科学重点实验室,北京100083 [2]中国科学院大学材料科学与光电技术学院,北京100049 [3]低维半导体材料与器件北京市重点实验室,北京100083

出　　处：《激光与光电子学进展》2023年第15期223-230,共8页Laser & Optoelectronics Progress

基　　金：国家自然科学基金(62134008)。

摘　　要：为研究氧化限制结构孔径对940 nm垂直腔面发射激光器(VCSEL)特性的影响,制备了不同氧化孔径的940 nm VCSEL,并进行了测试分析。通过PICS3D软件对不同量子阱势垒材料的增益进行仿真计算,选取具有较高有源区材料增益的InGaAs/AlGaAs作为量子阱,并开展了增益-腔模失配设计。在设计优化的基础上,制备了6种氧化孔径的940 nm VCSEL,对其光电输出特性进行测试。结果表明:氧化孔径为4μm的VCSEL,室温下斜率效率为0.93 W/A,最大功率转换效率为40.1%;氧化孔径为7μm的VCSEL,室温下最大输出功率为12.24 mW;氧化孔径为2μm的VCSEL,室温下最大基横模功率为2.67 mW。该器件在2 mA连续驱动电流下,在10~80℃的范围内均可实现边模抑制比大于45 dB的基横模输出。In order to study the influence of oxide aperture diameter on the characteristics of 940 nm vertical cavity surface emitting laser(VCSEL),940 nm VCSELs with varied oxide apertures were fabricated,and then tested for analyzing.The gain of the quantum wells with different candidate barrier materials was simulated by PICS3D software,and InGaAs/AlGaAs was selected because of the higher gain.Moreover,the gain-cavity mode detuning was introduced in the design.On the basis of optimization,940 nm VCSELs with six oxide apertures were fabricated and their photoelectric output characteristics were tested.The results show that the VCSEL with 4μm oxide aperture achieves a slope efficiency of 0.93 W/A at room temperature and a maximum power conversion efficiency of 40.1%.For VCSEL with 7μm oxide aperture,the maximum output power reaches 12.24 mW at room temperature.The VCSEL with 2μm oxide aperture can operate on the fundamental transverse mode condition with maximum output power of 2.67 mW at room temperature,and maintain the fundamental transverse mode with a side-mode suppression ratio greater than 45 dB at 2 mA continuous injection current,on the working temperature from 10℃ to 80℃.

关 键 词：激光器 垂直腔面发射激光器 氧化限制结构 基横模 孔径 

分 类 号：TN248.4[电子电信—物理电子学]