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作 者:郝群[1,2,3] 唐鑫 陈梦璐 Hao Qun;Tang Xin;Chen Menglu(School of Optics and Photonics,Beijing Institute of Technology,Beijing 100081,China;Beijing Key Laboratory for Precision Optoelectronic Measurement Instrument and Technology,Beijing 100081,China;Yangtze Delta Region Academy of Beijing Institute of Technology,Jiaxing 314019,Zhejiang,China)
机构地区:[1]北京理工大学光电学院,北京100081 [2]精密光电测试仪器及技术北京市重点实验室,北京100081 [3]北京理工大学长三角研究院,浙江嘉兴314019
出 处:《光学学报》2023年第15期3-16,共14页Acta Optica Sinica
基 金:国家重点研发计划(2021YFA0717600);国家自然科学基金(62035004,62105022,U22A2081)。
摘 要:受限于复杂的分子束外延生长及倒装键合工艺,现有块体半导体红外探测器成本高昂、工艺复杂、极大制约了成像阵列规模和分辨率的进一步提升。胶体量子点作为一种新兴的半导体纳米晶体材料,因“量子限域”效应,能够实现宽谱段范围内的精准带隙调控。同时,胶体量子点可通过液相化学合成方法低成本大批量制备。此外,胶体量子点的液相加工工艺使得其可以与硅基读出电路进行直接片上电学耦合,突破了倒装键合工艺限制。因此,胶体量子点在红外探测及成像领域展现了巨大的应用前景。其中硫汞族量子点具有探测波段范围宽、物性调控易及便于硅基集成等优势,先后实现了中波红外背景限探测、双色探测及焦平面阵列成像等,在红外光电技术展示了巨大的潜力。本综述总结了近年来硫汞族胶体量子点红外光电探测技术的研究现状,并对其未来发展方向进行了展望。Significance Infrared detectors play an important role in military and aerospace fields including guidance,remote sensing,and reconnaissance.At present,infrared detectors are mainly based on bulk semiconductor materials such as mercury cadmium telluride(HgCdTe),indium gallium arsenic(InGaAs),and indium antimonide(InSb).However,these materials need to be fabricated on a lattice-matched substrate by a high-cost epitaxially grown method and be integrated with readout circuits through complex flip-chip bonding technology,restricting the further improvement of imaging array scale and resolution.Thus,it is significant to develop new material systems to replace traditional bulk semiconductor materials,so as to achieve low-cost,large-scale,and high-resolution infrared detectors.The colloidal quantum dots(CQDs),as new semiconductor nanocrystal materials,can achieve precise band-gap regulation in a wide spectrum due to the quantum confinement effect.Besides,CQDs can be synthesized on a large scale and at a low cost by liquid-phase chemical method.Furthermore,the liquid phase processing technology of CQDs enables direct on-chip electrical coupling with silicon readout circuits without the need for flip-bonding.Therefore,CQD materials have gained wide attention and made significant progress in infrared detection and imaging.Among them,mercury chalcogenide CQDs have been proven to have a wide range of infrared detection bands including short-wave,mid-wave,and long-wave infrared bands.Besides,two-color or multi-color band detection,focal plane array imaging,and infraredto-visible upconverters based on mercury chalcogenide CQDs have been studied and exhibited excellent device performance.Although infrared optoelectrical detection technology based on mercury chalcogenide CQDs has been widely studied,there is a lack of review to summarize the recent works.Hence,it is important to summarize the existing research and propose the future development direction.Progress First,according to the absorption process of CQDs,the infrared det
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