Identifying the relationships between subsurface absorber defects and the characteristics of kesterite solar cells  

作　　者：Dae-Ho Son Dong-Hwan Jeon Dae-Hwan Kim Jin-Kyu Kang Shi-Joon Sung Jaebaek Lee Taeseon Lee Enkhjargal Enkhbayar JunHo Kim Kee-Jeong Yang 

机构地区：[1]Division of Energy Technology,DGIST,Daegu,Republic of Korea [2]Research Center for Thin Film Solar Cells,DGIST,Daegu,Republic of Korea [3]Department of Physics,Incheon National University,Incheon,Republic of Korea

出　　处：《Carbon Energy》2023年第8期42-54,共13页碳能源（英文）

基　　金：the National Research Foundation of Korea(NRF)grant funded by the Ministry of Science and ICT(No.2022M3J1A1085371);the DGIST R&D programs of the Ministry of Science and ICT(23-ET-08 and 23-CoE-ET-01);the National Research Foundation of Korea(NRF),funded by the Korean Government(NRF-2021R1A2C1008598).

摘　　要：Understanding the defect characteristics that occur near the space-charge regions(SCRs)of kesterite(CZTSSe)solar cells is important because the recombination loss at the CZTSSe/CdS interface is considered the main cause of their low efficiency.CZTSSe surfaces with different elemental compositions were formed without polishing(C00)and with polishing for 20 s(C20)and 60 s(C60).For C60,a specific region near the SCR was excessively Cu-rich and Zn-poor compared to C00 and C20.Various charged defects formed where the elemental variation was large.As the main deep acceptor defect energy level(E_(a2))near the SCR increased,the efficiency,open-circuit voltage deficit,and current density degraded,and this phenomenon was especially rapid for large E_(a2) values.As the E_(a2) near the SCR became deep,the carrier diffusion length decreased more for the CZTSSe solar cells with a low carrier mobility than for the CuInGaSe_(2)(CIGSe)solar cells.The large amplitude of the electrostatic potential fluctuation in the CZTSSe solar cells induced a high carrier recombination and a short carrier lifetime.Consequently,the properties of the CZTSSe solar cells were more strongly degraded by defects with deep energy levels near the SCR than those of the CIGSe solar cells.

关 键 词：defect density defect energy level elemental variation KESTERITE space charge region 

分 类 号：TM914.4[电气工程—电力电子与电力传动] TB34[一般工业技术—材料科学与工程]