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作 者:李凯[1,2] 宋长禹 岳剑峰 贾梦瑜 许志鹏 吴頔 曹晨 白振旭 于宇 王雨雷 吕志伟 Li Kai;Song Changyu;Yue Jianfeng;Jia Mengyu;Xu Zhipeng;Wu Di;Cao Chen;Bai Zhenxu;Yu Yu;Wang Yulei;Lv Zhiwei(Center for Advanced Laser Technology,Hebei University of Technology,Tianjin 300401,China;Hebei Key Laboratory of Advanced Laser Technology and Equipment,Tianjin 300401,China;BWT Tianjin Ltd.,Tianjin 300300,China)
机构地区:[1]河北工业大学先进激光技术研究中心,天津300401 [2]河北省先进激光技术与装备重点实验室,天津300401 [3]天津凯普林光电科技有限公司,天津300300
出 处:《红外与激光工程》2023年第8期290-293,共4页Infrared and Laser Engineering
基 金:国家自然科学基金项目(62075056,61927815);天津市自然科学基金项目(20JCZDJC00430)。
摘 要:亚纳秒激光因其对光电器件的损伤优于纳秒激光和飞秒激光,而被广泛应用于光电对抗领域。然而,在常规水冷条件下实现输出数百赫兹焦耳级亚纳秒激光还面临较大的挑战。笔者课题组面向国防重大需求,结合端面泵浦微片晶体百皮秒激光产生技术和多程多级板条激光放大技术,对板条激光器的放大性能进行大量的实验研究,并提出了温控双端泵浦技术,弥补双端泵浦结构的缺陷。实现板条激光器单脉冲能量952 mJ,重复频率500 Hz的激光输出,这将为光电对抗系统所需的高重频大能量激光提供优质光源。Objective The high-energy,high-repetition-rate sub-nanosecond lasers have been widely applied in various fields such as industry,military,and scientific research due to their superior peak power compared to nanosecond lasers and enhanced stability compared to femtosecond lasers.Researchers have discovered that sub-nanosecond lasers have a lower threshold for causing complete damage to optoelectronic devices compared to nanosecond and femtosecond lasers.Therefore,high-repetition-rate,high-energy sub-nanosecond solid-state lasers offer significant advantages in the field of optoelectronic countermeasures.Currently,under conventional water cooling conditions,the single-pulse energy of high-repetition-rate lasers has surpassed the hundred-millijoule level.However,for optoelectronic countermeasure applications,higher repetition rates and higher single-pulse energies are required to improve the hit rate on rapidly moving targets.Thus,the breakthrough of higher repetition rates and high-energy sub-nanosecond lasers is urgently needed.Methods This paper presents the realization of Joule-level sub-nanosecond laser output by combining endpumped microchip crystal picosecond laser generation technology and multi-pass multi-stage slab laser amplification techniques.Initially,the microchip laser is pre-amplified through a three-stage end-pumping process,scaling the microjoule-level energy to millijoule-level.Subsequently,the shaped laser beam with a size of 2×18 mm2 is injected into a first-stage single-end-pumped slab amplifier system.The amplified laser is then transmitted through a first-stage imaging and beam expanding system before being injected into a second-stage dual-end-pumped double-pass amplifier system.Finally,the laser is further amplified through a third-stage singlepass booster amplifier in the slab configuration.This study presents the design of a dual-end pumping structure(Fig.1),with the omission of the isolation system.Results and Discussions In the dual-end-pumping structure,the energy of the leaked pump
分 类 号:TN248[电子电信—物理电子学]
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