单晶硅等离子体放电去除机制研究  

STUDY ON REMOVAL MECHANISM OF SINGLE-CRYSTAL SILICON BY PLASMA DISCHARGE

作　　者：翟志波 刘菲菲 贾国平 辛彬[2] 王艳辉 ZHAI ZhiBo;LIU FeiFei;JIA GuoPing;XIN Bin;WANG YanHui(School of Mechanical and Equipment Engineering,Hebei University of Engineering,Handan 056038,China;School of Optoelectronic Engineering,Xi′an Technological University,Xi′an 710021,China)

机构地区：[1]河北工程大学机械与装备工程学院,邯郸056038 [2]西安工业大学光电工程学院,西安710021

出　　处：《机械强度》2023年第5期1090-1095,共6页Journal of Mechanical Strength

基　　金：国家自然科学基金资助项目(52001105);河北省高等学校科学技术研究项目资助及项目立项编号(ZD2021024,BJ2021012);邯郸市科技局项目(21422301290)资助。

摘　　要：针对单晶Si在接触式化学机械抛光与非接触式等离子体抛光过程中表面易引入化学元素残留、微划痕及材料去除速率低等问题,提出一种单晶Si等离子体放电去除的非接触式绿色抛光方法。在脉冲电压大于100 V的水基工作液介质中,高阻态隔离蒸汽层因电子通量的小曲率汇聚而导致击穿并诱发氧等离子体通道,阳极单晶Si表面微区凸起位置因氧等离子体增强阳极化学反应而生成SiO_(2)疏松膜,脉冲间歇期等离子体通道因受近壁面水基工作液介质冷激液化致塌陷,同时形成空化微射流压力对疏松膜进行纳米尺度剥离。通过对样件处理一定的时间后,样件表面粗糙度可达1.54 nm,并且样件表面不会引入新的化学元素,为脆硬性材料的平面/非平面超精密加工提供一种绿色非接触式方法。Aiming at the problems of easy introduction of chemical element residues,micro scratches and low material removal rate in contact chemical mechanical polishing and non-contact plasma polishing processes of single-crystal silicon,a non-contact green polishing method of plasma cavitation stripping for single-crystal silicon is proposed.In the water-based working fluid medium with pulse voltage more than 100 V,the high impedance state isolation vapor layer breaks down due to the small curvature convergence of electron flux and induces an oxygen plasma channel.The convex position of the micro-region on the surface of the anode single crystal Si generates an SiO_(2)loose film due to the enhancement of the anode chemical reaction by the oxygen plasma.During the pulse intermission period,the plasma channel collapses due to the cold shock liquefaction of the water-based working fluid medium near the wall surface,and cavitation micro-jet impact force is formed at the same time to strip the loose film on a nano scale.After treating the sample for a certain time,the surface roughness of the sample can reach 1.54 nm,and no new chemical elements will be introduced into the surface of the sample.It provides a green non-contact method for plane/non-plane ultra-precision machining of brittle and hard materials.

关 键 词：放电机理 等离子体 去除机制 参数控制 单晶硅 

分 类 号：TP301.6[自动化与计算机技术—计算机系统结构]