二维层状In_(2)Se_(3)材料的快速制备及结构特性研究  

Rapid Preparation and Structural Characterization of Two-Dimensional Layered In_(2)Se_(3)Materials

作　　者：俞书昕 金泽辛 陈容 李韬 祖翔宇 吴海飞 YU Shuxin;JIN Zexin;CHEN Rong;LI Tao;ZU Xiangyu;WU Haifei(Shaoxing University,Shaoxing 312000,China)

机构地区：[1]绍兴文理学院,绍兴312000

出　　处：《人工晶体学报》2023年第10期1787-1792,共6页Journal of Synthetic Crystals

基　　金：浙江省自然科学基金(LY19E020009)。

摘　　要：In_(2)Se_(3)二维层状材料具有优异的光电、热电和铁电特性。目前In_(2)Se_(3)二维层状材料大部分通过对化学气相输运(CVT)法制备的块体In_(2)Se_(3)进行机械剥离获得,CVT法制备工艺复杂、制备时间长、成本高,与之相比,布里奇曼(B-S)法具有制备工艺简单、制备效率高、成本低的优势。为此,本文对CVT法和B-S法制备的块体In_(2)Se_(3)分别进行了机械剥离,并转移到SiO_(2)/Si(111)基底,获得了相应的二维层状In_(2)Se_(3)样品。同时利用原子力显微镜(AFM)、激光拉曼和X射线衍射(XRD)对两样品进行表面形貌、晶格振动谱和结晶质量的测量,发现用B-S法制备、剥离的样品具有与CVT法制备、剥离样品几乎相同的表面原子级平整度和单晶结晶质量。本文为高质量二维层状In_(2)Se_(3)材料的获得提供了更为经济实用的途径。In_(2)Se_(3)2D layered materials have excellent photoelectric,thermoelectric and ferroelectric properties.At present,most of the In_(2)Se_(3)materials are obtained by mechanical exfoliation of bulk In_(2)Se_(3)prepared by the complicated chemical vapor transport(CVT)method with long time and high cost.Compared with CVT method,the Bridgman(B-S)method has the advantages of simple preparation process,high efficiency and low cost.In this paper,the bulk In_(2)Se_(3)prepared by CVT and B-S method were mechanically exfoliated and transferred to SiO_(2)/Si(111)substrates to obtain the corresponding two-dimensional layered In_(2)Se_(3)samples.The surface morphology,lattice vibration spectrum and crystalline quality of both samples were also measured by atomic force microscopy(AFM),laser Raman and X-ray diffraction(XRD).The results show that the samples prepared and exfoliated by B-S method have almost the same surface atomic level flatness and single crystal crystalline quality as those prepared and exfoliated by CVT method.This paper provides a more economical and practical way to obtain high-quality two-dimensional layered In_(2)Se_(3)materials.

关 键 词：In_(2)Se_(3) 二维层状材料 机械剥离 化学气相输运法 布里奇曼法 

分 类 号：O766[理学—晶体学] O484