基于硒微米棒的宽光谱响应的光电探测器  

Selenium microrods-based broadband photodetector

作　　者：余翔翔[1,2] 张恒 王宝霖 缪向水 叶镭[1,3] YU Xiang-Xiang;ZHANG Heng;WANG Bao-Lin;MIAO Xiang-Shui;YE Lei(School of Integrated Circuits,Huazhong University of Science and Technology,Wuhan 430074,China;School of Physic and Optoelectronic Engineering,Yangtze University,Jingzhou 434023,China;Hubei Yangtze Memory Laboratories,Wuhan 430205,China)

机构地区：[1]华中科技大学集成电路学院,湖北武汉430074 [2]长江大学物理与光电工程学院,湖北荆州434023 [3]湖北省江城实验室,湖北武汉430205

出　　处：《红外与毫米波学报》2023年第5期652-658,共7页Journal of Infrared and Millimeter Waves

基　　金：Supported by the National Natural Science Foundation of China(11304092,51371079,11305056,11304299,51602099)。

摘　　要：采用物理气相沉积法合成硒微米棒,并以银浆为电极制备了金属-半导体-金属结构的光电探测器。该光电探测器在3 V偏压和450 nm光照下具有快速的响应速度(上升时间=41 ms,下降时间=46 ms),优异的响应度(18.32 m A/W)和探测率(1.65×10^(8)Jones)。光谱测试表明器件具有从可见光到近红外的宽光谱探测能力(450~1550 nm)。此外,该器件还可以在无偏压下进行自供能探测。本研究将进一步完善硒半导体在宽光谱光电探测中的应用和发展。In this paper,Se microrods were synthesized using a physical vapor deposition method,and a metalsemiconductor-metal(MSM)photodetector was fabricated by using silver paste as the electrode.This photodetec⁃tor exhibits a fast response time(Tr=41 ms,Td=46 ms),excellent responsivity(18.32 mA/W),and detectivity(1.65×10^(8)Jones)at 3 V bias and under 450 nm light illumination.Spectral measurements demonstrate that the device has a broadband detection range from visible to near infrared range(450~1550 nm).Additionally,the de⁃vice can also perform self-powered detection without bias.This research will further improve the application and development of Se in broadband photodetection.

关 键 词：光电探测器 宽光谱探测 自供能探测 硒微米棒 

分 类 号：O43[机械工程—光学工程]