Measurement of the electronic structure of a type-Ⅱ topological Dirac semimetal candidate VAI_(3) using angle-resolved photoelectron spectroscopy  

作　　者：Hong-Wei Fang Ai-Ji Liang Niels B.M.Schroter Sheng-Tao Cui Zhong-Kai Liu Yu-Lin Chen 

机构地区：[1]School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China [2]University of Chinese Academy of Sciences,Beijing 100049,China [3]ShanghaiTech Laboratory for Topological Physics,ShanghaiTech University,Shanghai 201210,China [4]Max Planck Institute of Microstructure Physics,Halle 06120,Germany [5]National Synchrotron Radiation Laboratory,University of Science and Technology of China,Hefei 230029,China [6]Department of Physics,University of Oxford,Oxford OX13PU,United Kingdom

出　　处：《Tungsten》2023年第3期332-338,共7页钨科技（英文）

基　　金：sponsored by the National Key R&D Program of China (Grant No. 2017YFA0305400);the National Natural Science Foundation of China (Grant No. 11674229);Shanghai Municipal Science and Technology Major Project (Grant No. 2018SHZDZX02)。

摘　　要：Type-Ⅱ topological Dirac semimetals are topological quantum materials hosting Lorentz-symmetry breaking type-Ⅱ Dirac fermions,which are tilted Dirac cones with various exotic physical properties,such as anisotropic chiral anomalies and novel quantum oscillations.Until now,only limited material systems have been confirmed by theory and experiments with the type-Ⅱ Dirac fermions.Here,we investigated the electronic structure of a new type-Ⅱ Dirac semimetal VA1_(3) with angle-resolved photoelectron spectroscopy.The measured band dispersions are consistent with the theoretical prediction,which suggests the Dirac points are located close to(at about 100 meV above) the Fermi level.Our work demonstrates a new type-Ⅱ Dirac semimetal candidate system with different Dirac node configurations and application potentials.

关 键 词：Dirac semimetal.Electronic structure Angle-resolved photoelectron spectroscopy K evaporation 

分 类 号：TB34[一般工业技术—材料科学与工程]