轧机中压变频系统IGCT门极驱动关键技术研究  

Key technology research on IGCT gate unit of medium voltage frequency conversion system in metallurgical mill

作　　者：曾宏 陈彦 王跃 陈芳林 卢圣文 潘学军 ZENG Hong;CHEN Yan;WANG Yue;CHEN Fanglin;LU Shengwen;PAN Xuejun(Zhuzhou CRRC Times Semiconductor Co.,Ltd.,Zhuzhou 412001,China;State Key Laboratory of Advanced Power Semiconductor Devices,Zhuzhou 412001,China;CRRC Zhuzhou Institute Co.,Ltd.,Zhuzhou 412001,China)

机构地区：[1]株洲中车时代半导体有限公司,湖南株洲412001 [2]新型功率半导体器件国家重点实验室,湖南株洲412001 [3]中车株洲电力机车研究所有限公司,湖南株洲412001

出　　处：《冶金自动化》2023年第4期79-85,共7页Metallurgical Industry Automation

摘　　要：冶金轧机中压变频系统采用集成门极换流晶闸管(integrated gate-commutated thyristor,IGCT)作为功率转换的开关器件,门极驱动(门驱)直接决定门极换流晶闸管(gate-commutated thyristor,GCT)的开关性能与工作状态。随着技术的发展,器件端与应用端的各种需求均可在门驱上得以实现。针对目前存在的GCT耐压约束性与GCT故障延时性问题开展关键技术研究,提出混合开关投切拓扑实现门阴极状态的主动控制技术,实现高压主电与低压控制电的完全解耦,消除器件特性对应用侧带来的硬性要求,充分保证GCT的安全,拓宽IGCT的应用领域;提出阴阳极主压双向高低压检测技术,进一步完善电监测信号,可将各种电压检测信号作为控制或保护信号,及时反映器件的工作状态。最后,通过样机验证各方案的可行性,实现门阴极可靠的反偏态或短路态,动态主动切换时间可控制在微秒级;实现低压数十伏至高压几千伏同步检测,已作为关键技术包用于工程化产品中。The medium voltage frequency conversion system of high-performance and high-power mill often uses integrated gate-commutated thyristor(IGCT)as the switching device in power converter.The gate unit directly determines the switching performance and working status of GCT.With the development of technology,various requirements from device and application can be realized by the gate unit.The key technology research was carried out for the existing problems of GCT withstand voltage constraints and GCT fault delay.The hybrid switching topology was proposed to realize the active control technology of gate cathode state,it realizes the complete decoupling of high main power voltage and low control power voltage,and eliminates the hard requirements of device characteristics on the application side,fully ensures the safety of GCT,and expands the application field of IGCT.A dual direction of high and low voltage detection technology for the main voltage of the cathode and anode was proposed to further improve the electrical monitoring signal.Various voltage detection signals can be used as control or protection signals to timely reflect the working state of devices.Finally,the feasibility of each technical point was verified by the prototype,and it achieves the reliable reverse bias or short circuit state of the gate cathode,and the dynamic active switching time can be controlled at microsecond level.It also realizes synchronous detection from tens of volts to thousands of volts,which has been used as a key technology package in engineering products.

关 键 词：IGCT 门驱 门阴极 主动控制 阳极电压 故障监测 

分 类 号：TG333[金属学及工艺—金属压力加工]