NiO光电阴极膜厚对量子点敏化太阳能电池性能的影响  

Effect of NiO photocathode film thickness on the performance of quantum dot sensitized solar cells

作　　者：王森阳 张兆有 孙杰[1] 梁城洋 曹颖 耿仕通 李玲[1] WANG Senyang;ZHANG Zhaoyou;SUN Jie;LIANG Chengyang;CAO Ying;GENG Shitong;LI Ling(Hebei Key Lab of Optic-electronic Information and Materials,Hebei Provincial Photovoltaic Technology Collaborative Innovation Center,College of Physics Science and Technology,Hebei University,Baoding 071002,China)

机构地区：[1]河北大学物理科学与技术学院,河北省光伏技术省部共建协同创新中心,河北省光电信息材料重点实验室,河北保定071002

出　　处：《河北大学学报（自然科学版）》2023年第5期492-499,共8页Journal of Hebei University(Natural Science Edition)

基　　金：国家自然科学基金资助项目(52271209);河北省自然科学基金重点资助项目(E2020201030);京津冀协同创新共同体建设专项(21344301D);河北大学2022年大学生创新创业计划训练资助项目(2022169,2022165,2022170)。

摘　　要：为探究量子点敏化太阳能电池(QDSSCs)中光阳极薄膜材料的最佳制备条件,通过一步高温水热法合成p型NiO纳米颗粒,并采用超声法将其制备成NiO浆料,丝网印刷在导电玻璃上以形成NiO薄膜.NiO薄膜可作为量子点敏化太阳能电池的光电阴极,结合Cu2S对电极和多硫化物电解质组装成太阳能电池.通过对不同膜厚NiO光电阴极薄膜的研究及反复测试,结果表明:当NiO薄膜材料膜厚为21μm时该电池存在最高的光电转换效率.This work is to explore the best preparation conditions of photoanode film materials in quantum dot sensitized solar cells(QDSSCs).P-type NiO nanoparticles are synthetized by one-step high temperature hydrothermal method,which is then screen printed on conductive glass to form NiO films.NiO films can be used as photocathode for quantum dot sensitized solar cells.Combine with Cu 2S counter electrode,solar cells are assembled.NiO photocathode films with different film thicknesses were studied and tested repeatedly.The results show that the highest photoelectric conversion efficiency is achieved when the film thickness of NiO film material is 21μm.

关 键 词：量子点敏化太阳能电池 NiO薄膜 材料膜厚 光电转化效率 

分 类 号：TQ172[化学工程—水泥工业]