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作 者:Mengjia Li Zuolin Zhang Jie Sun Fan Liu Jiangzhao Chen Liming Ding Cong Chen
机构地区:[1]State Key Laboratory of Reliability and Intelligence of Electrical Equipment,School of Materials Science and Engineering,Hebei University of Technology,Tianjin 300401,China [2]Center for Excellence in Nanoscience(CAS),Key Laboratory of Nanosystem and Hierarchical Fabrication(CAS),National Center for Nanoscience and Technology,Beijing 100190,China [3]Key Laboratory of Optoelectronic Technology&Systems(MoE),College of Optoelectronic Engineering,Chongqing University,Chongqing 400044,China [4]Department of Chemical Engineering,Kansas State University,Manhattan,KS 66506,USA [5]Macao Institute of Materials Science and Engineering(MIMSE),Macao University of Science and Technology,Macao 999078,China
出 处:《Journal of Semiconductors》2023年第10期2-5,共4页半导体学报(英文版)
基 金:This work was supported by the National Natural Science Foundation of China(62004058 and U21A2076);Natural Science Foundation of Hebei Province(F2020202022);State Key Laboratory of Reliability and Intelligence of Electrical Equipment(EERI_PI20200005);S&T Program of Hebei(215676146H and 225676163GH);Hebei Graduate Innovation Funding Project(CXZZBS2023037 and CXZZSS2023026);L.Ding thanks the National Key Research and Development Program of China(2022YFB3803300);the open research fund of Songshan Lake Materials Laboratory(2021SLABFK02);the National Natural Science Foundation of China(21961160720).
摘 要:Inverted perovskite solar cells(PSCs)have attracted interest due to their simple fabrication,long-term stability,and small hysteresis[1-3].It is noteworthy that the quality of the hole-transport layer(HTL)largely determines the device performance.Nickel oxide(NiO_(x))has been paid great attention as a hole-transport material in PSCs because of its natural p-type property,low cost,good stability,and high transmittance[4,5].
关 键 词:TRANSPORT LAYER stability
分 类 号:TM914.4[电气工程—电力电子与电力传动]
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