基于边缘智能优化的高性能模式转换器逆设计  

Inverse Design of High Performance Mode Converter Based on Edge Optimization

作　　者：杨子荣 田野 廖俊鹏 康哲 张晓伟 金庆辉 Yang Zirong;Tian Ye;Liao Junpeng;Kang Zhe;Zhang Xiaowei;Jing Qinghui(Faculty of Electrical Engineering and Computer Science,Ningbo University,Ningbo 315211,Zhejiang,China;College of Optical Science and Engineering,Zhejiang University,Hangzhou 310058,Zhejiang,China)

机构地区：[1]宁波大学信息科学与工程学院,浙江宁波315211 [2]浙江大学光学科学与工程学院,浙江杭州310058

出　　处：《中国激光》2023年第18期292-299,共8页Chinese Journal of Lasers

基　　金：国家自然科学基金(62105167,62075188,61974078);浙江省自然科学基金(LQ22F050008,LY21F050007,LY21F040002);江苏省重点研发计划(BE2021082);宁波市自然科学基金(2021J074,2021J059)。

摘　　要：模式转换器是实现模分复用技术(MDM)的关键部件。基于伴随法对器件边缘进行智能优化,从而在绝缘体上硅(SOI)平台上设计了高性能TE0-TE1模式转换器。经仿真验证,在中心波长1550 nm处,模式转换效率达99.6%,消光比达31.2 dB,而损耗仅为0.01 dB。在1500~1600 nm带宽范围内,TE0-TE1的转换效率保持在96.6%以上,消光比保持在15.7 dB以上,而损耗保持在0.14 dB以下。当器件尺寸变化在±20 nm以内时,器件在1550 nm处的转换效率保持在97.2%以上,消光比保持在16.5 dB以上,插入损耗维持在0.12 dB以下。在片上设计了TE1模式的测试装置,并利用商业流片对转换器进行制备。实验结果表明,在60 nm的带宽范围内,TE0-TE1转换器的转换效率保持在90%以上,插入损耗维持在0.4 dB以下。因此,所提出的转换器具有高转换效率、宽带宽、低插入损耗和高制作容差等特点,为高性能片上模式转换器的高效设计提供了新思路。Objective The rapid development of digital information technology has placed higher requirements on the transmission capacities and energy consumption of data centers.Mode multiplexing/demultiplexing(MUX/DEMUX)technology based on silicon-oninsulator(SOI)platforms is highly promising for realizing on-chip data transmission with high capacity,low loss,and low cost and has thus become a research hotspot in scientific research and industry.As the basic unit of the MUX/DEMUX technique,mode converters with high conversion efficiency,low loss,and larger bandwidth are indispensable.Thus far,most of the reported mode converters are realized by using specific structures such as directional couplers,asymmetric Y-junctions,multimode interference couplers,and asymmetric directional couplers.The designs of these mode converters rely on designer experience and require considerable time to optimize structural parameters.In addition,when the design target(target mode)changes,redesigning and optimizing the structure are often necessary,where the repetitive work leads to low design efficiency.However,inverse design of device structures through intelligent algorithms can effectively reduce the design costs of devices and improve design efficiency.In this study,a highly efficient mode converter based on edge shape optimization is presented on an SOI platform.The footprint of the device is 10.0μm×1.5μm.TE0-TE1 converter has the advantages of high conversion efficiency,high extinction ratio,low insertion loss,and high fabrication tolerance within a larger bandwidth using an adjoint method.Furthermore,the mode converter is fabricated using a commercial multi-project wafer(MPW)program,and measurements are executed using a novel on-chip test structure.Methods First,the initial structure of the device was designed while 100 discrete boundary optimization points were simultaneously inserted into the top boundary of the design region of the TE0-TE1 device.The edge of the mode converter was then optimized by adjusting the position of the o

关 键 词：集成光学 硅基模式转换器 模分复用 逆设计 伴随法 

分 类 号：TN256[电子电信—物理电子学]