High-responsivity InAs quantum well photo-FET integrated on Si substrates for extended-range short-wave infrared photodetector applications  

作　　者：DAEHWAN AHN SUNGHAN JEON †HOYOUNG SUH SEUNGWAN WOO RAFAEL JUMAR CHU DAEHWAN JUNG WON JUN CHOI DONGHEE PARK JIN-DONG SONG WOO-YOUNG CHOI JAE-HOON HAN 

机构地区：[1]Center for Opto-Electronic Materials and Devices,Korea Institute of Science and Technology(KIST),Seoul 02792,Republic of Korea [2]Department of Electrical and Electronic Engineering,Yonsei University,Seoul 03722,Republic of Korea

出　　处：《Photonics Research》2023年第8期1465-1473,共9页光子学研究（英文版）

基　　金：Institute for Information and Communications Technology Promotion(2022-0-00208);National Research Foundation of Korea(2022M3F3A2A01065057,2022R1C1C1007333);Korea Institute of Science and Technology(2E32242)。

摘　　要：Low-intensity light detection necessitates high-responsivity photodetectors.To achieve this,we report In_(0.53)Ga_(0.47)As∕In As∕In_(0.53)Ga_(0.47)As quantum well(InAs QW)photo-field-effect-transistors(photo-FETs)integrated on a Si substrate using direct wafer bonding.Structure of the In As QW channel was carefully designed to achieve higher effective mobility and a narrower bandgap compared with a bulk In_(0.53)Ga_(0.47)As,while suppressing the generation of defects due to lattice relaxations.High-performance 2.6 nm In As QW photo-FETs were successfully demonstrated with a high on/off ratio of 10~5 and a high effective mobility of 2370 cm^(2)∕(V·s).The outstanding transport characteristics in the InAs QW channel result in an optical responsivity 1.8 times greater than InGaAs photo-FETs and the fast rising/falling times.Further,we experimentally confirmed that the InAs QW photo-FET can detect light in the short-wavelength infrared(SWIR;1.0–2.5μm)near 2μm thanks to bandgap engineering through In As QW structures.Our result suggests that the InAs QW photo-FET is promising for high-responsivity and extended-range SWIR photodetector applications.

关 键 词：RESPONSIVITY QUANTUM wave 

分 类 号：TN215[电子电信—物理电子学] TN386