Thermally tunable GeSi electro-absorption modulator with a wide effective operating wavelength range  

作　　者：YUFEI LIU JIALIANG SUN XINYU LI SHUXIAO WANG WENCHENG YUE YAN CAI MINGBIN YU 

机构地区：[1]National Key Laboratory of Materials for Integrated Circuits,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China [2]University of Chinese Academy of Sciences,Beijing 100049,China [3]Shanghai IndustrialμTechnology Research Institute,Shanghai 201800,China

出　　处：《Photonics Research》2023年第8期1474-1483,共10页光子学研究（英文版）

基　　金：National Key Research and Development Program of China(2021YFB0301000);Strategic Pioneer Research Projects of Defense Science and Technology(XDB43020500);Shanghai Sailing Program(20YF1456900)。

摘　　要：We demonstrate a GeSi electro-absorption modulator with on-chip thermal tuning for the first time,to the best of our knowledge.Theoretical simulation proves that the device temperature can be tuned and the effective operating wavelength range can be broadened.When the heater power is 4.63 mW,the temperature of the waveguide increases by about 27 K and the theoretical operating wavelength range is broadened by 23.7 nm.The experimental results show that the optical transmission line shifted to the longer wavelength by 4.8 nm by every 1 mW heater power.The effective static operating wavelength range of the device is increased from 34.4 nm to 60.1 nm,which means it is broadened by 25.7 nm.The band edge shift coefficient of 0.76 nm/K is obtained by temperature simulation and linear fitting of the measured data.The device has a 3 dB EO bandwidth of 89 GHz at 3 V reverse bias,and the eye diagram measurement shows a data rate of 80 Gbit/s for non-return-to-zero on–off keying modulation and 100 Gbit/s for 4 pulse amplitude modulation in the 1526.8 nm to 1613.2 nm wavelength range as the heater power increases from 0 mW to 10.1 mW.

关 键 词：MODULATOR TUNABLE WAVEGUIDE 

分 类 号：TN256[电子电信—物理电子学] TN761