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作 者:王道远 高成喆 黄婉霞[1] 孟坤 施奇武[1] Wang Daoyuan;Gao Chengzhe;Huang Wanxia;Meng Kun;Shi Qiwu(College of Materials Science and Engineering,Sichuan University,Chengdu 610065,Sichuan,China;Qingdao QUNDA Terahertz Technology Co.,Ltd.,Qingdao 266104,Shandong,China)
机构地区:[1]四川大学材料科学与工程学院,四川成都610065 [2]青岛青源峰达太赫兹科技有限公司,山东青岛266104
出 处:《激光与光电子学进展》2023年第18期194-200,共7页Laser & Optoelectronics Progress
基 金:NSAF基金(U2230128,U1930123);国家自然科学基金(U20A20212);四川省自然科学基金(2022NSFSC0498)。
摘 要:对太赫兹(THz)波的传输调控是THz光学系统设计、通信、成像应用等领域的基础技术之一.界面阻抗匹配效应可以用于实现高效THz波反射调控,但尚未见硅基界面阻抗设计实现THz波调控的报道.本研究利用自组装法在高阻硅基底上制备MXene膜层,通过增加膜层厚度改变其电阻特性,进而连续调节Si/MXene/空气界面阻抗,实现高效的THz波减反射.在接近阻抗匹配态时,界面THz波反射率减少幅度达83%,透过率衰减约为30%.还利用THz波层析扫描成像技术,得到了Si/MXene/空气界面阻抗变化导致的THz波反射强度变化趋势.设计的具有高效THz波反射调控性能的Si基功能界面为THz波传输调控提供了一种新思路.Efficient regulation of terahertz(THz)waves is crucial for their utilization in THz optical system,communications,imaging,etc.High-efficiency THz wave reflection regulation can be achieved through interface impedance matching.However,there have been no reports of THz wave regulation achieved via silicon-based interface impedance design.In this study,MXene films were fabricated on high-resistance silicon substrates using the self-assembly method,and their resistance were changed by increasing the thickness of the film.The impedance of the Si/MXene/air interface was continuously adjusted to achieve efficient THz wave attenuation.When approaching the impedance-matched state,the THz reflectivity at the interface is reduced by 83%,while the transmittance decays by approximately 30%.This study also confirmed the variation trend in THz wave reflection intensity resulting from the impedance change of the Si/MXene/air interface,employing THz wave tomography imaging technology.The silicon-based functional interface designed in this work,which offers efficient THz wave reflection regulation,presents a novel approach for achieving THz wave transmission regulation.
分 类 号:TN247[电子电信—物理电子学]
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