非化学计量比Ba_(0.9)(Fe_(0.5)Nb_(0.5))O_(3-δ)薄膜中晶格畸变诱导的铁电性  

Lattice distortion-induced ferroelectricity in nonstoichiometric Ba_(0.9)(Fe_(0.5)Nb_(0.5))O_(3-δ)thin films

作　　者：杨明迪 李姗 王艺霖 籍伟花 李天宇 吕宗霖 陈昕 李强 苗君 邢献然 Mingdi Yang;Shan Li;Yilin Wang;Weihua Ji;Tianyu Li;Zonglin Lv;Xin Chen;Qiang Li;Jun Miao;Xianran Xing(Beijing Advanced Innovation Center for Materials Genome Engineering,Institute of Solid State Chemistry,Department of Physical Chemistry,University of Science and Technology Beijing,Beijing 100083,China;College of Materials Science and Engineering,Nanjing Tech University,Nanjing 211816,China;Beijing Advanced Innovation Center for Materials Genome Engineering,Department of Physical Chemistry,University of Science and Technology Beijing,Beijing 100083,China)

机构地区：[1]Beijing Advanced Innovation Center for Materials Genome Engineering,Institute of Solid State Chemistry,Department of Physical Chemistry,University of Science and Technology Beijing,Beijing 100083,China [2]College of Materials Science and Engineering,Nanjing Tech University,Nanjing 211816,China [3]Beijing Advanced Innovation Center for Materials Genome Engineering,Department of Physical Chemistry,University of Science and Technology Beijing,Beijing 100083,China

出　　处：《Science China Materials》2023年第9期3681-3686,共6页中国科学（材料科学（英文版）

基　　金：supported by the National Key R&D Program of China (2020YFA0406202);the National Natural Science Foundation of China (22090042, 21731001 and 22175018);Guangxi BaGui Scholars Special Funding。

摘　　要：实现材料的顺电-铁电相变可以丰富铁电材料的多样性.本文通过设计和引入A位非化学计量缺陷,在Ba_(0.9)(Fe_(0.5)Nb_(0.5))O_(3-δ)薄膜中实现了晶格畸变,诱导出室温铁电.薄膜中引入的四方畸变和局部位错促进了结构的对称性破缺以及自发极化的出现.在这里我们成功实现了室温下剩余极化Pr约为8μC cm^(-2)的铁电性和高达450℃的相稳定性温度我们的研究工作为通过缺陷工程发现和调节新型铁电材料提供了一种实用的方法.Transforming materials from paraelectric state to ferroelectric state provides a tremendous opportunity to increase the variety of ferroelectric materials,but it remains a big challenge.Herein,A-site nonstoichiometric defects are artificially designed in Ba_(0.9)(Fe_(0.5)Nb_(0.5))O_(3-δ)thin film,resulting in the appearance of lattice distortion and ferroelectric state.Tetragonal distortion and partial dislocation are introduced so as to benefit the symmetry breaking and promote spontaneous polarization.Robust ferroelectricity at room temperature with a remanent polarization around 8μC cm^(−2) and a high phase stability temperature up to 450℃ are successfully achieved.Our work proposes a practical approach for discovering and regulating new ferroelectric materials through defect engineering.

关 键 词：对称性破缺 铁电材料 非化学计量比 晶格畸变 缺陷工程 自发极化 铁电相变 相稳定性 

分 类 号：TB34[一般工业技术—材料科学与工程]