多光谱TDI-CMOS图像传感器读出电路设计  

Design of A Multispectral TDI-CMOS Image Sensor Readout Circuit

作　　者：刘戈扬[1] 刘昌举[1,2] 翟江皞 李明[1] 徐江涛[2] 王小东 任思伟[1] LIU Geyang;LIU Changju;ZHAI Jianghao;LI Ming;XU Jiangtao;WANG Xiaodong;REN Siwei(Chongqing Optoelectronics Research Institute,Chongqing 400060,CHN;School of Microelectronics,Tianjin University,Tianjin 300072,CHN)

机构地区：[1]重庆光电技术研究所,重庆400060 [2]天津大学微电子学院,天津300072

出　　处：《半导体光电》2023年第4期525-531,共7页Semiconductor Optoelectronics

摘　　要：针对3D集成式多光谱TDI-CMOS图像传感器的数字化处理和高速读出需求,为了解决与TDICCD探测器的整体布局、物理尺寸和接口的匹配性和一致性问题,研制了适用于五谱段TDICCD的CMOS读出电路芯片。该读出电路芯片创新地设计了一种使用多相位ADC时钟、支持相关多次采样的新型列级单斜ADC电路结构,实现了TDICCD信号的数字化和高速输出,有效提升了探测器的动态范围和噪声指标。流片测试结果表明:读出电路芯片的功能正常,集成式TDICCD的成像效果良好,新型列级ADC工作正常,读出电路以最小9.5μs的行周期输出14 bit数据,相关多次采样具备降低输出信号噪声的作用,实现了TDICCD信号的高精度数字化处理和高速输出,满足3D集成式TDI-CMOS图像传感器的研制要求。A CMOS readout IC for five-spectrum-band TDICCD detector was developed to address the digitization and high-speed readout requirements of 3D integrated multispectral TDICMOS image sensors and to solve the matching and consistency problems of the overall layout,physical size and I/O interface with the TDICCD detector.A new column single-slope ADC architecture was designed for this readout IC,which used multi-phase ADC clock and supported correlated multiple sampling(CMS),realizing the digitization and high-speed output of TDICCD output signals and effectively improving the dynamic range and noise performance of the TDICCD detector.The tests after tapeout show that the readout IC functions normally,the imaging results of the integrated TDICCD detector is good and the new column ADC works fine.The readout IC outputs 14bit data with a minimum line readout period of 9.5μs,and the CMS reduces output noise effectively,realizing the high-precision digital processing and high-speed output of the TDICCD output signal,and meeting the requirements of 3D integrated TDI-CMOS image sensor development.

关 键 词：CMOS读出电路 多光谱TDICCD 芯片3D集成 单斜ADC 相关多次采样 

分 类 号：TN79[电子电信—电路与系统] TP212[自动化与计算机技术—检测技术与自动化装置]